田中 一

Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation 

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017-September 277 - 280 2017年  査読有り

Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation 

Journal of Physics: Conference Series 864(1) 2017年  査読有り

Size and geometric effects on conduction band structure of GaAs nanowires 

2013 International Meeting for Future of Electron Devices, Kansai (IMFEDK) 118 - 119 2013年  査読有り