MISC

査読有り
2013年

Size and geometric effects on conduction band structure of GaAs nanowires

2013 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  • H. Tanaka
  • ,
  • N. Morioka
  • ,
  • S. Mori
  • ,
  • J. Suda
  • ,
  • T. Kimoto

開始ページ
118
終了ページ
119
記述言語
英語
掲載種別
DOI
10.1109/IMFEDK.2013.6602267

The conduction band structure of GaAs nanowires with various cross-sectional shapes and orientations was calculated by a tight-binding model and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases. However, the amount of the increase in mass is strongly dependent on the wire orientations and substrate faces of nanowires, which originates from the anisotropy of Γ valley of bulk GaAs. © 2013 IEEE.

リンク情報
DOI
https://doi.org/10.1109/IMFEDK.2013.6602267

エクスポート
BibTeX RIS