MISC

査読有り
2015年

Impacts of Orientation and Cross-sectional Shape on Hole Mobility of Si Nanowire MOSFETs

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)
  • Hiroaki Fujihara
  • ,
  • Naoya Morioka
  • ,
  • Hajime Tanaka
  • ,
  • Jun Suda
  • ,
  • Tsunenobu Kimoto

記述言語
英語
掲載種別
出版者・発行元
IEEE

We fabricated < 100 >, < 110 >, < 111 >, and < 112 > p-channel gate-all-around Si nanowire (SiNW) MOSFETs, cross sections of which are rectangles with various widths, and investigated the hole mobility of the SiNW MOSFETs using the double L-m method. Measured hole mobilities of SiNW MOSFETs were about 80-140 cm(2)/Vs at surface carrier density of 1 x 10(13) cm(-2). The dependences of the hole mobility on orientations and cross-sectional shapes of nanowires were analyzed. The orientation and geometry dependences can be explained by the band structures calculated by tight-binding approximation.

Web of Science ® 被引用回数 : 1

リンク情報
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000380445900042&DestApp=WOS_CPL

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