We fabricated < 100 >, < 110 >, < 111 >, and < 112 > p-channel gate-all-around Si nanowire (SiNW) MOSFETs, cross sections of which are rectangles with various widths, and investigated the hole mobility of the SiNW MOSFETs using the double L-m method. Measured hole mobilities of SiNW MOSFETs were about 80-140 cm(2)/Vs at surface carrier density of 1 x 10(13) cm(-2). The dependences of the hole mobility on orientations and cross-sectional shapes of nanowires were analyzed. The orientation and geometry dependences can be explained by the band structures calculated by tight-binding approximation.
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