Hajime Tanaka

界面準位の影響に着目したSiC MOS反転層における電子輸送の理論的検討 

先進パワー半導体分科会第6回個別討論会 Sep 14, 2020   Invited

Effects of inelastic scattering on inter-layer tunneling between vertically stacked semiconductor nanoribbons 

International Symposium on Hybrid Quantum Systems 2019 Dec 2, 2019 

NEGF simulation of band-to-band tunneling in TMD heterojunctions 

International Symposium on Hybrid Quantum Systems 2019 Dec 2, 2019 

Theoretical Study of Band Structure Effects on Impact Ionization Coefficients in Wide-bandgap Semiconductors 

9th Asia-Pacific Workshop on Widegap Semiconductors Nov 12, 2019 

Monte Carlo Simulation of Hall Mobility in 4H-SiC MOS Inversion Layers 

International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 Oct 2, 2019 

Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction 

International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 Oct 2, 2019 

NEGF analysis of classical Hall effect in two-dimensional systems 

International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures Jul 16, 2019 

NEGF simulation of inter-layer tunneling between semiconductor nanoribbons 

International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures Jul 15, 2019 

Simulation of Electron Mobility in 4H-SiC MOS Interface Focusing on Impacts of Interface States 

14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures Oct, 2018 

Influence of interface states on threshold voltage of SiC short-channel MOSFETs 

12th European Conference on Silicon Carbide and Related Materials Sep, 2018 

Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation 

2017 International Conference on Simulation of Semiconductor Processes and Devices Sep, 2017 

Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process 

2017 IEEE Silicon Nanoelectronics Workshop Jun, 2017 

Theoretical Analysis of Hole Density, Hole Mobility, and Hall Scattering Factor in p-type 4H-SiC 

11th European Conference on Silicon Carbide and Related Materials Sep, 2016 

Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation 

33rd International Conference on the Physics of Semiconductors Aug, 2016 

Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires 

2016 IEEE Silicon Nanoelectronics Workshop Jun, 2016 

Ballistic and Quasi-ballistic Hole Transport Properties in Germanium Nanowire pMOSFETs Based on an Extended “Top of the Barrier” Model 

2015 International Conference on Solid State Devices and Materials Sep, 2015