論文

査読有り
2018年

Evaluation of ITO/a-Si interface properties by hard X-ray photoemission spectroscopy

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)
  • Tappei Nishihara
  • ,
  • Takuto Kojima
  • ,
  • Takuya Hiyama
  • ,
  • Hideki Matsumura
  • ,
  • Takefumi Kamioka
  • ,
  • Yoshio Ohshita
  • ,
  • Satoshi Yasuno
  • ,
  • Ichiro Hirosawa
  • ,
  • Atsushi Ogura

開始ページ
2170
終了ページ
2172
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
出版者・発行元
IEEE

We investigated the damage using hard X-ray photoemission spectroscopy (HAXPES), and found that the a-Si surface was oxidized due to the energetic oxygen ambient during the deposition. For the conventional and advanced sputter, the Si-O peak intensity at the ITO/a-Si interface did not change by post deposition annealing, but for RPD the peak intensity decreased. From the O is and In 3d spectra, it is considered the oxygen at the ITO/a-Si interface moved to the oxygen deficient in ITO. We also verified the damaged oxide was partially recovered by the post deposition annealing process.

リンク情報
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000469200402047&DestApp=WOS_CPL
ID情報
  • ISSN : 2159-2330
  • eISSN : 2159-2349
  • Web of Science ID : WOS:000469200402047

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