2014年9月21日
Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C
Journal of Applied Physics
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 116
- 号
- 11
- 開始ページ
- 114502
- 終了ページ
- 114502
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4895635
- 出版者・発行元
- American Institute of Physics
Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH_3) or diborane (B_2H_6) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, "Cat-doping", in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10^<18> to 10^<19> cm^<-3> for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.
- リンク情報
-
- DOI
- https://doi.org/10.1063/1.4895635
- CiNii Articles
- http://ci.nii.ac.jp/naid/120005650343
- URL
- http://scitation.aip.org/deliver/fulltext/aip/journal/jap/116/11/1.4895635.pdf?itemId=/content/aip/journal/jap/116/11/10.1063/1.4895635&mimeType=pdf&containerItemId=content/aip/journal/jap
- URL
- http://aip.scitation.org/doi/pdf/10.1063/1.4895635
- ID情報
-
- DOI : 10.1063/1.4895635
- ISSN : 0021-8979
- eISSN : 1089-7550
- CiNii Articles ID : 120005650343