松浦哲也 (Tetsuya Matsuura) - マイポータル

基本情報

学位: 工学博士(東京工業大学)

J-GLOBAL ID: 200901085783757544
researchmap会員ID: 5000093776

外部リンク: http://iss.ndl.go.jp/books/R100000002-I000009112192-00

研究キーワード

研究分野

経歴

2004年 - 2005年

東京工業大学大学院 21世紀COEプログラム「フォトニクスナノデバイス集積工学」 COE課程博士研究員

学歴

- 2007年3月

東京工業大学, 総合理工学研究科, 物理情報システム創造
- 2007年3月

東京工業大学

論文

Investigation of the polarization characteristics of GaInAsSb-covered InAs quantum dots for application to surface-emitting devices

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 90(10) 1-8 2007年査読有り
Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tetsuya Matsuura, Furnio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45(20-23) L585-L587 2006年6月
Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tetsuya Matsuura, Furnio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45(20-23) L585-L587 2006年6月
Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

Applied Physics Letters 88(18) 183109 2006年5月1日
Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

Applied Physics Letters 88(18) 183109 2006年5月1日
Structure-dependent lasing characteristics of tunnel injection GaInAs/AlGaAs single-quantum-well lasers

M Ohta, T Furuhata, T Iwasaki, T Matsuura, Y Kashihara, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45(4-7) L162-L164 2006年2月
Structure-dependent lasing characteristics of tunnel injection GaInAs/AlGaAs single-quantum-well lasers

M Ohta, T Furuhata, T Iwasaki, T Matsuura, Y Kashihara, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45(4-7) L162-L164 2006年2月
Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE

T. Matsuura, T. Miyamoto, M. Ohta, F. Koyama

Physica Status Solidi C: Conferences 3(3) 516-519 2006年
InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition

R Suzuki, T Miyamoto, T Matsuura, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 3(3) 528-+ 2006年
Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range

M Ohta, T Miyamoto, T Matsuura, Y Matsui, T Furuhata, T Iwasaki, Y Kashihara, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 3(3) 419-+ 2006年
Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE

T Matsuura, T Miyamoto, M Ohta, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 3(3) 516-+ 2006年
InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition

R Suzuki, T Miyamoto, T Matsuura, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 3(3) 528-+ 2006年
Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range

M Ohta, T Miyamoto, T Matsuura, Y Matsui, T Furuhata, T Iwasaki, Y Kashihara, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 3(3) 419-+ 2006年
Polarization characteristics of Sb-introduced Ga(In)As covered InAs quantum dots

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS 345-+ 2006年査読有り
PL characteristics of InAs quantum dots with Sb irradiation in growth interruption

T Matsuura, T Miyamoto, M Ohta, Y Matsui, T Furuhata, F Koyama

JOURNAL OF CRYSTAL GROWTH 278(1-4) 51-56 2005年5月
PL characteristics of InAs quantum dots with Sb irradiation in growth interruption

T. Matsuura, T. Miyamoto, M. Ohta, Y. Matsui, T. Furuhata, F. Koyama

Journal of Crystal Growth 278(1-4) 51-56 2005年5月1日
Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy

M Ohta, T Miyamoto, T Kageyama, T Matsuura, Y Matsui, T Furuhata, F Koyama

JOURNAL OF CRYSTAL GROWTH 278(1-4) 521-525 2005年5月査読有り
Topologocal characteristics of MBE grown Sb-introduced Ga(In)As covered InAs quantum dots on GaAs

T Matsuura, T Miyamoto, M Ohta, F Koyama

2005 International Conference on Indium Phosphide and Related Materials 351-354 2005年査読有り
Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers

M Ohta, T Furuhata, T Matsuura, Y Matsui, T Miyamoto, F Koyama

2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS 30-31 2005年査読有り
Optical quality dependence on growth rate for solid-source molecular beam epitaxy grown highly strained GaInAsSb/GaAs quantum wells

M Ohta, T Miyamoto, T Matsuura, Y Matsui, T Furuhata, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43(12B) L1569-L1571 2004年12月査読有り