論文

査読有り
2018年1月1日

Formation of crystalline silicon-germanium thin films on silicon substrates by solid phase crystallization

Thin Solid Films
  • Alaa Hamdoh
  • ,
  • Tetsuya Kaneko
  • ,
  • Masao Isomura

645
開始ページ
203
終了ページ
208
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.tsf.2017.10.002
出版者・発行元
Elsevier B.V.

We have researched on the formation of crystalline silicon-germanium (c-SiGe) films as a new material for bottom cells of silicon-based multi-junction solar cells. We conducted solid phase crystallization (SPC) from amorphous SiGe (a-SiGe) precursors with 80–70% Ge fraction deposited on n-type [100] single crystalline silicon (c-Si) substrates. Preferential crystal growth following the orientation of c-Si substrates is successfully done by the SPC at temperatures from 500 to 950 °C, although X-ray diffraction indicates that the c-SiGe films have the mosaic structures consisting of crystalline domains with several tens of nanometers. Lower SPC temperature is more appropriate to obtain better crystallinity SiGe with larger domain size and lower mosaicity as long as the crystallization occurs. The inter-diffusion between the a-SiGe precursors and Si substrates occurs at relatively high SPC temperatures (≥ 850 °C), and the Ge fraction in the c-SiGe films becomes lower than that in the a-SiGe precursors.

リンク情報
DOI
https://doi.org/10.1016/j.tsf.2017.10.002
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000418305200032&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.tsf.2017.10.002
  • ISSN : 0040-6090
  • SCOPUS ID : 85032695418
  • Web of Science ID : WOS:000418305200032

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