論文

査読有り
2017年3月

Mechanical Deformation of Sintered Porous Ag Die Attach at High Temperature and Its Size Effect for Wide-Bandgap Power Device Design

JOURNAL OF ELECTRONIC MATERIALS
  • Chuantong Chen
  • ,
  • Shijo Nagao
  • ,
  • Hao Zhang
  • ,
  • Jinting Jiu
  • ,
  • Tohru Sugahara
  • ,
  • Katsuaki Suganuma
  • ,
  • Tomohito Iwashige
  • ,
  • Kazuhiko Sugiura
  • ,
  • Kazuhiro Tsuruta

46
3
開始ページ
1576
終了ページ
1586
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1007/s11664-016-5200-3
出版者・発行元
SPRINGER

The mechanical properties of sintered Ag paste with microporous structure have been investigated by tensile and shear tests, focusing on the temperature-dependent plastic deformation at various temperatures from 25A degrees C to 300A degrees C, corresponding to the target operating temperature range of emerging wide-bandgap semiconductor devices. Specimens were prepared by sintering hybrid Ag paste consisting of microflake and submicron spherical Ag particles, simulating a typical bonding process for power semiconductor die attach. Mechanical tests revealed that the unique microstructure caused a brittle-to-ductile transition at temperature of around 160A degrees C, remarkably lower than that of bulk Ag. The obtained Young's modulus and shear modulus values indicate obvious softening with increasing temperature, together with a remarkable decrease in Poisson's ratio. These plastic behaviors at elevated temperature can be explained based on Coble creep in the microporous network structure. Fracture surfaces after tensile and shear tests indicated unique features on scanning electron microscopy, reflecting the variation in the ductile behavior with the test temperature. Furthermore, these temperature-dependent mechanical parameters were employed in three-dimensional finite-element analysis of the thermomechanical stress distribution in wide-bandgap semiconductor module structures including Ag paste die attach of different sizes. Detailed thermal stress analysis enabled precise evaluation of the packaging design for wide-bandgap semiconductor modules for use in high-temperature applications.

リンク情報
DOI
https://doi.org/10.1007/s11664-016-5200-3
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000394212600020&DestApp=WOS_CPL
ID情報
  • DOI : 10.1007/s11664-016-5200-3
  • ISSN : 0361-5235
  • eISSN : 1543-186X
  • Web of Science ID : WOS:000394212600020

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