2013年
In situ STM observations of step structures in a trench around an InAs QD at 300 1°C
Journal of Crystal Growth
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- 巻
- 378
- 号
- 1
- 開始ページ
- 44
- 終了ページ
- 46
- 記述言語
- 英語
- 掲載種別
- 研究論文（学術雑誌）
- DOI
- 10.1016/j.jcrysgro.2012.12.075
- 出版者・発行元
- Elsevier B.V.
We successfully confirmed unique atomic structures in a trench around an InAs quantum dot (QD) at 300 °C. The trench structure was consisted by various atomic steps which included 4 × structures (InAs (4×2) and/or GaAs (4×6)) at an upper terrace edge next to a step. As distant from the upper terrace edge, frequency of 4 × structures decreased and gradually converged to 2 × structures (InAs (2×4), InAs (2×3), and GaAs (2×4)). © 2013 Elsevier B.V. All rights reserved.
- ID情報
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- DOI : 10.1016/j.jcrysgro.2012.12.075
- ISSN : 0022-0248
- SCOPUS ID : 84885428554