2012年9月
Fabrication of Fully Epitaxial CoFe/MgO/CoFe Magnetic Tunnel Junctions on Ge(001) Substrates via a MgO Interlayer
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 51
- 号
- 9
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JJAP.51.093003
- 出版者・発行元
- IOP PUBLISHING LTD
Fully epitaxial magnetic tunnel junctions (MTJs) with Co50Fe50 (CoFe) electrodes and a MgO barrier were fabricated on Ge(001) single-crystal substrates via a MgO interlayer. Microfabricated CoFe/MgO/CoFe MTJs with a 10-nm-thick MgO interlayer showed a high tunnel magnetoresistance (TMR) ratio of 218% at 293 K, which is encouraging for monolithic integration of MTJs and Ge field-effect transistors for constructing future-generation nonvolatile logic circuits featuring ultralow-power consumption. Furthermore, MTJs with even a decreased MgO interlayer thickness of 1.0nm showed a relatively high TMR ratio of 110% at 293 K, suggesting the promise of heterostructures consisting of MTJ/MgO interlayer/Ge(001) as a key device structure for spin injection into a Ge channel from an MTJ. (C) 2012 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.51.093003
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000308489700047