論文

2020年10月

Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment

IEEE Transactions on Electron Devices
  • Tsung-En Lee
  • ,
  • Mengnan Ke
  • ,
  • Kasidit Toprasertpong
  • ,
  • Mitsuru Takenaka
  • ,
  • Shinichi Takagi

67
10
開始ページ
4067
終了ページ
4072
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1109/ted.2020.3014563
出版者・発行元
Institute of Electrical and Electronics Engineers ({IEEE})

We report improvement of TiN/Y2O3/Si0.78Ge0.22 metal-oxide-semiconductor (MOS) interface properties by employing the trimethylaluminum (TMA) pretreatment before Y2O3 deposition. It is found that the optimum number of the TMA pretreatment cycles for minimizing interface trap density ( D-it) and slow trap density (Delta N-st) of TiN/Y2O3/SiGe interfaces with post metallization annealing (PMA) at 450 degrees C is ten cycles. The reduction in D-it and Delta N-st is attributable to less amounts of Ge-O bonds at the SiGe interfaces. On the other hand, an increase in D-it with further increasing the number of TMA pretreatment is attributable to more amounts of Al-O bonds in ILs.

リンク情報
DOI
https://doi.org/10.1109/ted.2020.3014563
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000572635400022&DestApp=WOS_CPL
ID情報
  • DOI : 10.1109/ted.2020.3014563
  • ISSN : 0018-9383
  • eISSN : 1557-9646
  • ORCIDのPut Code : 82710170
  • Web of Science ID : WOS:000572635400022

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