2020年10月
Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment
IEEE Transactions on Electron Devices
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- 巻
- 67
- 号
- 10
- 開始ページ
- 4067
- 終了ページ
- 4072
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/ted.2020.3014563
- 出版者・発行元
- Institute of Electrical and Electronics Engineers ({IEEE})
We report improvement of TiN/Y2O3/Si0.78Ge0.22 metal-oxide-semiconductor (MOS) interface properties by employing the trimethylaluminum (TMA) pretreatment before Y2O3 deposition. It is found that the optimum number of the TMA pretreatment cycles for minimizing interface trap density ( D-it) and slow trap density (Delta N-st) of TiN/Y2O3/SiGe interfaces with post metallization annealing (PMA) at 450 degrees C is ten cycles. The reduction in D-it and Delta N-st is attributable to less amounts of Ge-O bonds at the SiGe interfaces. On the other hand, an increase in D-it with further increasing the number of TMA pretreatment is attributable to more amounts of Al-O bonds in ILs.
- リンク情報
- ID情報
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- DOI : 10.1109/ted.2020.3014563
- ISSN : 0018-9383
- eISSN : 1557-9646
- ORCIDのPut Code : 82710170
- Web of Science ID : WOS:000572635400022