2016年11月
Memory operations in Au nanoparticle single-electron transistors with floating gate electrodes
APPLIED PHYSICS LETTERS
- ,
- ,
- ,
- 巻
- 109
- 号
- 22
- 開始ページ
- 223106-1
- 終了ページ
- 223106-5
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4971190
- 出版者・発行元
- AMER INST PHYSICS
Floating gate memory operations are demonstrated in a single-electron transistor (SET) fabricated by a chemical assembly using the Au nanogap electrodes and the chemisorbed Au nanoparticles. By applying pulse voltages to the control gate, phase shifts were clearly and stably observed both in the Coulomb oscillations and in the Coulomb diamonds. Writing and erasing operations on the floating gate memory were reproducibly observed, and the charges on the floating gate electrodes were maintained for at least 12 h. By considering the capacitance of the floating gate electrode, the number of electrons in the floating gate electrode was estimated as 260. Owing to the stability of the fabricated SET, these writing and erasing operations on the floating gate memory can be applied to reconfigurable SET circuits fabricated by a chemically assembled technique. Published by AIP Publishing.
- リンク情報
- ID情報
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- DOI : 10.1063/1.4971190
- ISSN : 0003-6951
- eISSN : 1077-3118
- Web of Science ID : WOS:000390243100040