2010年
Single-Electron Transistor Fabricated by Two Bottom-Up Processes of Electroless Au Plating and Chemisorption of Au Nanoparticle
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 49
- 号
- 9
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JJAP.49.090206
- 出版者・発行元
- JAPAN SOC APPLIED PHYSICS
Coulomb diamonds were clearly observed on single-electron transistors (SETs) fabricated by bottom-up processes of electroless plating of Au nanogap electrodes and chemisorption of a Au nanoparticle at 80 K. In the drain current-drain voltage characteristics, Coulomb staircases were modulated by the side gate voltage. Tunneling resistances and source/drain/gate capacitances of the SET were evaluated by fitting the theoretical Coulomb staircase determined on the basis of the full orthodox theory in a double-barrier tunneling junction to the experimental results of Coulomb blockade under the application of side gate voltages. The theoretical results for the Coulomb diamond are in good agreement with the experimental results. (C) 2010 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.49.090206
- ISSN : 0021-4922
- Web of Science ID : WOS:000282136400007