入沢寿史 (Toshifumi Irisawa) - マイポータル

基本情報

115

CVD grown bilayer WSe<inf>2</inf>/MoSe<inf>2</inf> heterostructures for high performance tunnel transistors

Toshifumi Irisawa, Naoya Okada, Wen Hsin Chang, Mitsuhiro Okada, Takahiro Mori, Takahiko Endo, Yasumitsu Miyata

Japanese Journal of Applied Physics 59(SG) 2020年4月
Advanced layer transfer technology of post-Si materials for heterogeneous integration

Tatsuro Maeda, Toshifumi Irisawa, Hiroyuki Ishii, Wen Hsin Chang

4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings 2020年4月
Performance and Reliability Improvement in Ge nMOSFETs with Different Surface Orientations through Channel Flattening Process

W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, T. Maeda

4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings 169 2020年4月
(Invited) epitaxial growth of Ge / III-V films and hetero-layer lift-off for ultra-thin geoi fabrication

Tatsuro Maeda, Toshifumi Irisawa, Hiroyuki Ishii, Wen Hsin Chang

ECS Transactions 98(5) 157 - 167 2020年
Gas-Source CVD Growth of Atomic Layered WS<inf>2</inf> from WF<inf>6</inf> and H<inf>2</inf>S Precursors with High Grain Size Uniformity

Mitsuhiro Okada, Naoya Okada, Wen Hsin Chang, Takahiko Endo, Atsushi Ando, Tetsuo Shimizu, Toshitaka Kubo, Yasumitsu Miyata, Toshifumi Irisawa

Scientific Reports 9(1) 2019年12月1日