2016年2月
Effect of localized KrF excimer laser treatment on fracture behaviors of freestanding < 110 > and < 100 > single crystal silicon beams
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
- ,
- ,
- ,
- 巻
- 22
- 号
- 2
- 開始ページ
- 379
- 終了ページ
- 386
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1007/s00542-015-2419-5
- 出版者・発行元
- SPRINGER
Microscale silicon structures oriented along < 100 > and < 110 > orientations were laser treated with different conditions with the cross section shape and tensile strength investigated after the treatment. Finite element simulation was performed to examine the temperature distribution at different conditions during laser treatment. Using a low energy (1.2 J/cm(2)) and high tilt angle (65A degrees) led to a more preserved cross section with a slight strength improvement. The strength improvement was limited due to other surfaces that were not affected by laser treatment. An improvement of 30 % in tensile strength was achieved with a higher energy (4 J/cm(2)) lower tilt angle (45A degrees) treatment that was consistent for different sample orientations. The cross section of the samples treated at such condition was significantly changed however. The effect of sample orientation on fracture behaviour was studied and unstable crack propagation was observed for < 100 > oriented samples that was more significant after laser treatment.
- リンク情報
- ID情報
-
- DOI : 10.1007/s00542-015-2419-5
- ISSN : 0946-7076
- eISSN : 1432-1858
- Web of Science ID : WOS:000368187500019