2014年6月
Improvement of tensile strength of freestanding single crystal silicon microstructures using localized harsh laser treatment
JAPANESE JOURNAL OF APPLIED PHYSICS
- ,
- ,
- ,
- 巻
- 53
- 号
- 6
- 開始ページ
- 06JM03
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/JJAP.53.06JM03
- 出版者・発行元
- IOP PUBLISHING LTD
Single crystal silicon freestanding microstructures were laser annealed for improving tensile strength. Annealing parameters were controlled to achieve smooth surfaces while using harsh laser energy conditions (4J/cm(2)) without fracture occurring by having localized treatment at the gauge section. Samples were tilted for efficient exposure of sidewalls to laser. Treated samples showed smooth sidewalls having the scallops due to fabrication eliminated. Such treatment was reflected in the increase in tensile strength from 3.2 to 3.84 GPa and in the fracture location shifting from being mainly on sidewalls to being evenly distributed on all surfaces. (C) 2014 The Japan Society of Applied Physics
- リンク情報
- ID情報
-
- DOI : 10.7567/JJAP.53.06JM03
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000338439500076