論文

査読有り
2014年6月

Improvement of tensile strength of freestanding single crystal silicon microstructures using localized harsh laser treatment

JAPANESE JOURNAL OF APPLIED PHYSICS
  • Mohamed E. Mitwally
  • ,
  • Toshiyuki Tsuchiya
  • ,
  • Osamu Tabata
  • ,
  • Sherif Sedky

53
6
開始ページ
06JM03
終了ページ
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.7567/JJAP.53.06JM03
出版者・発行元
IOP PUBLISHING LTD

Single crystal silicon freestanding microstructures were laser annealed for improving tensile strength. Annealing parameters were controlled to achieve smooth surfaces while using harsh laser energy conditions (4J/cm(2)) without fracture occurring by having localized treatment at the gauge section. Samples were tilted for efficient exposure of sidewalls to laser. Treated samples showed smooth sidewalls having the scallops due to fabrication eliminated. Such treatment was reflected in the increase in tensile strength from 3.2 to 3.84 GPa and in the fracture location shifting from being mainly on sidewalls to being evenly distributed on all surfaces. (C) 2014 The Japan Society of Applied Physics

リンク情報
DOI
https://doi.org/10.7567/JJAP.53.06JM03
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000338439500076&DestApp=WOS_CPL
ID情報
  • DOI : 10.7567/JJAP.53.06JM03
  • ISSN : 0021-4922
  • eISSN : 1347-4065
  • Web of Science ID : WOS:000338439500076

エクスポート
BibTeX RIS