論文

査読有り
2013年3月

Fatigue characteristics of polycrystalline silicon thin-film membrane and its dependence on humidity

JOURNAL OF MICROMECHANICS AND MICROENGINEERING
  • Tomoki Tanemura
  • ,
  • Shuichi Yamashita
  • ,
  • Hiroyuki Wado
  • ,
  • Yukihiro Takeuchi
  • ,
  • Toshiyuki Tsuchiya
  • ,
  • Osamu Tabata

23
3
開始ページ
035032
終了ページ
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1088/0960-1317/23/3/035032
出版者・発行元
IOP PUBLISHING LTD

This paper describes fatigue characteristics of a polycrystalline silicon thin-film membrane under different humidity evaluated by out-of-plane resonant vibration. The membrane, without the surface of sidewalls by patterning of photolithography and etching process, was applied to evaluate fatigue characteristics precisely against the changes in the surrounding humidity owing to narrower deviation in the fatigue lifetime. The membrane has 16 mm square-shaped multilayered films consisting of a 250 or 500 nm thick polysilicon film on silicon dioxide and silicon nitride underlying layers. A circular weight of 12 mm in diameter was placed at the center of the membrane to control the resonant frequency. Stress on the polysilicon film was generated by deforming the membrane oscillating the weight in the out-of-plane direction. The polysilicon film was fractured by fatigue damage accumulation under cyclic stress. The lifetime of the polysilicon membrane extended with lower relative humidity, especially at 5%RH. The results of the fatigue tests were well formulated with Weibull's statistics and Paris' law. The dependence of fatigue characteristics on humidity has been quantitatively revealed for the first time. The crack growth rate indicated by the fatigue index decreased with the reduction in humidity, whereas the deviation of strength represented by the Weibull modulus was nearly constant against humidity.

リンク情報
DOI
https://doi.org/10.1088/0960-1317/23/3/035032
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000314816800033&DestApp=WOS_CPL
ID情報
  • DOI : 10.1088/0960-1317/23/3/035032
  • ISSN : 0960-1317
  • Web of Science ID : WOS:000314816800033

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