Shiro Tsukamoto

Profile Information

Affiliation: Specially Appointed Professor, The University of Electro-Communications

Degree: Dr. Eng.(Mar, 1993, Univ.Tokyo)

J-GLOBAL ID: 201601009285736383
researchmap Member ID: B000269099

Research Interests

Research Areas

Nanotechnology/Materials / Crystal engineering / Semiconductor Crystal Engneering

Research History

Apr, 2021 - Present

Joint Project Professor, Dipartimento di Scienza dei Materiali,, Università degli Studi di Milano-Bicocca,
Apr, 2021 - Present

Specially Appointed Professor, Division of General Education,, The University of Electro-Communications,
Apr, 2017 - Mar, 2021

Visiting Professor, National Institute of Technology, Anan College,
Sep, 2017 - Aug, 2020

Visiting Professor, Assegnista di ricerca (Research Fellow), Dipartimento di Scienza dei Materiali,, Università degli Studi di Milano-Bicocca,
Apr, 2007 - Mar, 2017

Special Research Professor (Nichia Corporation Endowed Chair), National Institute of Technology, Anan College,
May, 2013 - Sep, 2013

Visiting Professor, The Institute of Scientific and Industrial Research,, Osaka University,
Apr, 2011 - Mar, 2012

Visiting Professor, The Institute for Solid State Physics,, The University of Tokyo,
Jan, 2003 - Mar, 2007

Specially Appointed Associate Professor, Institute of Industrial Science,, The University of Tokyo,
Apr, 2001 - Dec, 2002

Senior Researcher, Nanodevice (Research) Group,, National Institute for Materials Science,
Apr, 1993 - Mar, 2001

Researcher → Senior Researcher, National Research Institute for Metals,, Science and Technology Agency,
Aug, 1988 - Dec, 1989

Research Assistant (supported by NASA-Langley, NASA-CR-185439,185440), Department of Electrical Engineering,, The University of Michigan,
Apr, 1986 - Mar, 1987

Intern, National Research Institute for Metals,, Science and Technology Agency,

Education

Apr, 1990 - Mar, 1993

Department of Electronic Engineering, Graduate School of Engineering,, The University of Tokyo,
Sep, 1988 - Dec, 1989

Department of Electrical Engineering, Graduate School of Engineering,, The University of Michigan,
Apr, 1983 - Mar, 1987

Department of Electrical Engineering, Faculty of Engineering,, Tokyo University of Science,
Apr, 1979 - Mar, 1982

Kamitsuruma Senior High School

Papers

141

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Stefano Vichi, Riccardo Tambone, Shiro Tsukamoto, Stefano Sanguinetti

SCIENTIFIC REPORTS, 11(1), Mar, 2021 Peer-reviewed
Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates

Dimosthenis Toliopoulos, Alexey Fedorov, Sergio Bietti, Monica Bollani, Emiliano Bonera, Andrea Ballabio, Giovanni Isella, Mohammed Bouabdellaoui, Marco Abbarchi, Shiro Tsukamoto, Stefano Sanguinetti

NANOMATERIALS, 10(12), Dec, 2020 Peer-reviewed
Intermittent growth for InAs quantum dot on GaAs(001)

Takashi Toujyou, Tomoya Konishi, Motoi Hirayama, Koichi Yamaguchi, Shiro Tsukamoto

JOURNAL OF CRYSTAL GROWTH, 551, Dec, 2020 Peer-reviewed
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Shiro Tsukamoto, Roberto Bergamaschini, Francesco Montalenti, Stefano Sanguinetti

NANOMATERIALS, 10(8), Aug, 2020 Peer-reviewed
Droplet epitaxy quantum dot based infrared photodetectors

Stefano Vichi, Sergio Bietti, Arastoo Khalili, Matteo Costanzo, Federica Cappelluti, Luca Esposito, Claudio Somaschini, Alexey Fedorov, Shiro Tsukamoto, Patrick Rauter, Stefano Sanguinetti

NANOTECHNOLOGY, 31(24), Mar, 2020 Peer-reviewed
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates

Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Shiro Tsukamoto, Stefano Sanguinetti

SCIENTIFIC REPORTS, 9, Oct, 2019 Peer-reviewed
Raman spectroscopy of epitaxial InGaN/Si in the central composition range

Mani Azadmand, Emiliano Bonera, Daniel Chrastina, Sergio Bietti, Shiro Tsukamoto, Richard Notzel, Stefano Sanguinetti

JAPANESE JOURNAL OF APPLIED PHYSICS, 58, Jun, 2019 Peer-reviewed
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors

Mani Azadmand, Luca Barabani, Sergio Bietti, Daniel Chrastina, Emiliano Bonera, Maurizio Acciarri, Alexey Fedorov, Shiro Tsukamoto, Richard Notzel, Stefano Sanguinetti

SCIENTIFIC REPORTS, 8, Jul, 2018 Peer-reviewed
Atomistic behaviour of (n x 3)- reconstructed areas of InAs-GaAs(001) surface at the growth condition

Tomoya Konishi, Shiro Tsukamoto, Tomonoroi Ito, Toru Akiyama, Ryo Kaida

JOURNAL OF CRYSTAL GROWTH, 477 104-109, Nov, 2017 Peer-reviewed
Hopkins-Skellam index and origin of spatial regularity in InAs quantum dot formation on GaAs(001)

Tomoya Konishi, Gavin R. Bell, Shiro Tsukamoto

JOURNAL OF APPLIED PHYSICS, 117(14), Apr, 2015 Peer-reviewed
In situ STM observations of step structures in a trench around an InAs QD at 300 degrees C

T. Toujyou, T. Otsu, D. Wakamatsu, M. Kurisaka, T. Konishi, S. Tsukamoto

JOURNAL OF CRYSTAL GROWTH, 378 44-46, Sep, 2013 Peer-reviewed
Incorporation of Mn atoms into the GaAs(110) surface

Motoi Hirayama, Shiro Tsukamoto

JOURNAL OF CRYSTAL GROWTH, 378 50-52, Sep, 2013 Peer-reviewed
S-termination effects for the catalytic activities of Pd on GaN(0001) surfaces

T. Konishi, Y. Ueta, M. Hirayama, N. Nishiwaki, S. Tsukamoto

APPLIED SURFACE SCIENCE, 258(21) 8334-8337, Aug, 2012 Peer-reviewed
Initial stages of MnAs heteroepitaxy and nanoisland growth on GaAs(110) and (001) surfaces

Motoi Hirayama, Gavin R. Bell, Shiro Tsukamoto

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(4), Jul, 2011 Peer-reviewed
In situ STM observation during InAs growth in nano holes at 300 degrees C

Takashi Toujyou, Shiro Tsukamoto

SURFACE SCIENCE, 605(13-14) 1320-1323, Jul, 2011 Peer-reviewed
Nano-clustered Pd catalysts formed on GaN surface for green chemistry

Motoi Hirayama, Yukiko Ueta, Tomoya Konishi, Shiro Tsukamoto

JOURNAL OF CRYSTAL GROWTH, 323(1) 150-153, May, 2011 Peer-reviewed
Spatial point analysis of quantum dot nucleation sites on InAs wetting layer

Tomoya Konishi, Shiro Tsukamoto

SURFACE SCIENCE, 605(5-6) L1-L5, Mar, 2011 Peer-reviewed
Initial stages of MnAs heteroepitaxy and nanoisland growth on GaAs(110) and (001) surfaces

Motoi Hirayama, Gavin R. Bell, Shiro Tsukamoto

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 29(4), 2011 Peer-reviewed
Surface study of organopalladium molecules on S-terminated GaAs

Tomoya Konishi, Nagatoshi Nishiwaki, Takashi Toujyou, Takuma Ishikawa, Teruki Teraoka, Yukiko Ueta, Yoshifumi Kihara, Hideji Moritoki, Tatsuo Tono, Mio Musashi, Takashi Tada, Seiji Fujikawa, Masamitu Takahasi, Gavin Bell, Masahiko Shimoda, Shiro Tsukamoto

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 8(2) 405-407, 2011 Peer-reviewed
In situ STM observation of site-controlled InAs nano-dot growth on GaAs(001) during In and As-4 irradiations

Takashi Toujyou, Shiro Tsukamoto

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 8(2) 402-404, 2011 Peer-reviewed

Misc.

7pAK-1 in-situ STM observation during compound semiconductor MBE growth

Tsukamoto Shiro

Meeting abstracts of the Physical Society of Japan, 69(2) 634-634, Aug 22, 2014
硫黄終端GaAs(001)-(2x6)面におけるX線表面散乱測定

小西智也, 東條孝志, 西脇永敏, 木原義文, 森時秀司, 多田孝, 藤川誠司, 高橋正光, BELL Gavin, 石井晃, 塚本史郎

応用物理学関係連合講演会講演予稿集, 56th(1), 2009
A new structure model proposed for the GaAs(001)-c(4×4) surface

Ohtake A., Nakamura J., Tsukamoto S., Koguchi N., Natori A.

Meeting abstracts of the Physical Society of Japan, 57(2) 753-753, Aug 13, 2002
27pYF-9 Structure analysis for Ga-stabilized GaAs(001) surfaces

Ohtake A., Tsukamoto S., Koguchi N., Ozeki M.

Meeting abstracts of the Physical Society of Japan, 57(1) 874-874, Mar 1, 2002
Ga-rich GaAs[001] surfaces observed by STM during high-temperature annealing in MBE chamber

S. Tsukamoto, M. Pristovsek, A. Ohtake, B. G. Orr, B. G. Orr, G. R. Bell, G. R. Bell, T. Ohno, N. Koguchi

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, 113-114, Jan 1, 2002

Books and Other Publications

量子ドットエレクトロニクスの最前線

塚本史郎 (Role: Contributor, 第3章解析・構造評価第2節 STMBEによるInAs量子ドット成長表面の原子レベルその場STM観察)

エヌ・ティー・エス, Mar, 2011
Handbook of Self Assmebled Semiconductor Nanostructures Novel Devices in Photonics and Electronics

Shiro Tsukamoto (Role: Contributor, 8. GaSb/GaAs quantum nanostructures by molecular beam epitaxy)

Elsevier, 2008

Presentations

282

Pd-catalysts on S-terminated GaAs and GaN substrates for green chemistry

S. Tsukamoto

Micro/Bio/Nanofluidics Unit Seminar, The Okinawa Institute of Science and Technology, Jan 17, 2017 Invited
化合物半導体を用いた研究最前線 -量子ドット発生メカニズムから担持型Pd触媒合成反応まで-

塚本史郎

長岡技術科学大学応用物理学特別セミナー, Dec 9, 2016 Invited
Crystal growth mechanism of InAs quantum dots on GaAs(001) investigated by STMBE method

S. Tsukamoto

Applied Physics Seminar, Tel Aviv University, Israel, Nov 30, 2016 Invited
Crystal growth mechanism investigated by STMBE method

S. Tsukamoto

Material Sciences Seminar, The Hebrew University of Jerusalem, Israel, Nov 23, 2016 Invited
STMBE断続供給法によるGaAs(001)面上InAs量子ドットの特異な形成過程観察

東條孝志, 勝野弘康, 山口浩一, 塚本史郎

第12回量子ナノ材料セミナー, Nov 21, 2016 Invited
Crystal growth mechanism of compound semiconductor quantum dots

S. Tsukamoto

International Conference CoMFoS16: Mathematical Analysis of Continuum Mechanics and Industrial Applications II, Oct 26, 2016 Invited
Spatial point process and Hopkins-Skellam index of InAs quantum dot formation on GaAs(001)

T. Konishi, G. Gavin, S. Tsukamoto

International Conference CoMFoS16: Mathematical Analysis of Continuum Mechanics and Industrial Applications II, Oct 26, 2016 Invited
III‐V族半導体量子ドット成長のその場観察と成長メカニズム

塚本史郎

化学工学会秋季大会研究発表講演要旨集(CD-ROM), Sep 6, 2016 Invited
Atomistic Evolution of (n×3)-reconstructed Areas of InAs-GaAs(001) Surface during MBE Growth

T. Konishi, S. Tsukamoto, T. Ito, T. Akiyama, R. Kaida

19th International Conference on Molecular-Beam Epitaxy (MBE2016), Sep, 2016
MBE成長中InAs‐GaAs(001)表面における(n×3)再構成領域の変化

小西智也, 塚本史郎, 伊藤智徳, 秋山亨, 海田諒

応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep 1, 2016
Size evolution of (nx3) reconstructed areas on growing InAs-GaAs(001) surface

T. Konishi, S. Tsukamoto, T. Ito, T. Akiyama, R. Kaida

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Aug, 2016
STMBE - 三元混晶III-III’-V型化合物半導体薄膜成長の謎に迫る -

塚本史郎

立命館グローバル・イノベーション研究機構名西セミナー, Feb, 2016 Invited
STMBE（分子線エピタキシィー成長中走査型トンネル顕微鏡観察）による化合物半導体ナノ構造結晶形成過程の解析

塚本史郎

大阪電気通信大学エレクトロニクス基礎研究所セミナー, Nov, 2015 Invited
Atomic-scale Fluctuation of InAs-GaAs(001) Surface Reconstruction and Non-classical Nucleation of Quantum Dots

小西智也, BELL Gavin R, 塚本史郎

日本結晶成長学会誌(CD-ROM), Oct, 2015
Mathematical Analysis of Reconstruction Morphology - Regularity of InAs Quantum Dot Formation -

T. Konishi, G. Bell, S. Tsukamoto

5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2015), Sep, 2015
STMBE - from the past to the future -

S. Tsukamoto, W. Wirth, M. Maier

5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2015), Sep, 2015 Invited
InAs quantum dot nucleation sites at 500C studied by STMBE intermittent In supply method

T. Toujyou, K. Yamaguchi, S. Tsukamoto

5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2015), Sep, 2015
InGaAs表面再構成分布と量子ドット規則化生成の数理解析

小西智也, BELL Gavin R, 塚本史郎

応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug 31, 2015
In断続供給によるInAs量子ドット形成過程のSTMBE観察

東條孝志, 東條孝志, 山口浩一, 塚本史郎

応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug 31, 2015
Novel Insight into Spatial Regularity of InAs Quantum Dot Formation Pattern of GaAs(001)

T. Konishi, G. Bell, S. Tsukamoto

The 42nd International Symposium on Compound Semiconductors (iscs2015), Jun, 2015

Professional Memberships

Industrial Property Rights

特許第5297519号半導体装置の製造方法

荒川泰彦, ギマールドゥニ, 塚本史郎, 江部広治, 菅原充
特許第5291472号固定型遷移金属触媒及びその製造方法並びにその使用方法

塚本史郎, 西脇永敏, 小西智也, 小池晴夫, 杉岡智教, 奥山彰
特許第5095260号半導体発光装置の製造方法

荒川泰彦, ギマールドゥニ, 塚本史郎, 江部広治, 菅原充
特開2012-124500 半導体装置の製造方法

荒川泰彦, ギマールドゥニ, 塚本史郎, 江部広治, 菅原充
特許第4704857号基板結合型金属触媒、及びその製造方法

西田篤司, 有澤光弘, 塚本史郎, 下田正彦
特開2010-158614 固定型遷移金属触媒及びその製造方法並びにその使用方法

塚本史郎, 西脇永敏, 小西智也, 小池晴夫, 杉岡智教, 奥山彰
特開2007-335848 半導体装置の製造方法

荒川泰彦, ギマールドゥニ, 塚本史郎, 江部広治, 菅原充
特許第3929867号基板結合型遷移金属触媒、及びその製造方法

西田篤司, 有澤光弘, 塚本史郎, 下田正彦
特開2007-054790 基板結合型金属触媒、及びその製造方法

西田篤司, 有澤光弘, 塚本史郎, 下田正彦
特開2005-270918 金属触媒及びその製造方法

西田篤司, 有澤光弘, 塚本史郎, 下田正彦
特許第3692407号半導体量子ドット素子の製造方法

楊涛, 館林潤, 塚本史郎, 荒川泰彦
特開2005-079182 半導体量子ドット素子及びその製造方法

楊涛, 館林潤, 塚本史郎, 荒川泰彦
特開2004-130258 基板結合型遷移金属触媒、及びその製造方法

西田篤司, 有澤光弘, 塚本史郎, 下田正彦
特許第3527941号半導体スーパーアトムとその結合体の作製方法

小口信行, 塚本史郎
特許第3188913号結晶成長観察装置

塚本史郎, 小口信行
特開2001-053014 半導体スーパーアトムとその結合体の作製方法

小口信行, 塚本史郎
特開平11-171692 結晶成長観察装置

塚本史郎, 小口信行

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