Vuong Van Cuong (Van Cuong Vuong) - マイポータル

基本情報

所属: 広島大学半導体産業技術研究所特任助教

J-GLOBAL ID: 202401004954492320
researchmap会員ID: R000073976

研究キーワード

研究分野

ものづくり技術（機械・電気電子・化学工学） / 電子デバイス、電子機器 /

経歴

2020年4月 - 現在

広島大学半導体産業技術研究所
2008年10月 - 2017年3月

Hanoi National University of Education, Faculty of Physics, Lecturer

学歴

2017年4月 - 2020年3月

広島大学
2008年10月 - 2011年1月

Vietnam National University, University of Engineering and Technology
2003年9月 - 2007年6月

Hanoi National University of Education, Faculty of Physics

論文

Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits

Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki

Japanese Journal of Applied Physics 63(8) 086503-086503 2024年8月1日査読有り筆頭著者責任著者
Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

Vuong Van Cuong, Kaho Koyanagi, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki

Japanese Journal of Applied Physics 63(1) 015503-015503 2024年1月1日査読有り筆頭著者責任著者
Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications

Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki

IEEE Transactions on Electron Devices 69(8) 4194-4199 2022年8月査読有り筆頭著者責任著者
500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC

Vuong Van Cuong, Tadashi Sato, Takamichi Miyazaki, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki

Japanese Journal of Applied Physics 61(3) 036501-036501 2022年2月18日査読有り筆頭著者責任著者
High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications

Vuong Van Cuong, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Tetsuya Meguro, Shin-Ichiro Kuroki

Japanese Journal of Applied Physics 59(12) 126504-126504 2020年11月25日査読有り筆頭著者責任著者
CF₄:O₂ surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC

Vuong Van Cuong, Takamichi Miyazaki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Satoshi Yasuno, Tomoyuki Koganezawa, Shin-Ichiro Kuroki

Japanese Journal of Applied Physics 59(5) 056501-056501 2020年4月29日査読有り筆頭著者責任著者
Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC

Vuong Van Cuong, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Satoshi Yasuno, Tomoyuki Koganezawa, Takamichi Miyazaki, Shin-Ichiro Kuroki

Japanese Journal of Applied Physics 58(11) 116501-116501 2019年10月15日査読有り筆頭著者責任著者
Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC

Vuongvan Cuong, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Satoshi Yasuno, Tomoyuki Koganezawa, Shinichiro Kuroki

Materials Science Forum 963 498-501 2019年7月19日査読有り筆頭著者責任著者
High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications

Vuong Van Cuong, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Satoshi Yasuno, Tomoyuki Koganezawa, Takamichi Miyazaki, Shin-Ichiro Kuroki

Thin Solid Films 669 306-314 2019年1月査読有り筆頭著者責任著者
Mechanism of the photocatalytic activity of p-Si(100)/n-ZnO nanorods heterojunction

Nguyen Thi Hoa, Vuong Van Cuong, Nguyen Dinh Lam

Materials Chemistry and Physics 204 397-402 2018年1月査読有り
Influence of absorption on phase-matched generation of coherent extreme ultraviolet radiation in a long interaction geometry

Cuong Van Vuong, Khuong Ba Dinh, Peter Hannaford, Lap Van Dao

Optik 127(5) 2874-2877 2016年3月査読有り筆頭著者
Coherent diffractive imaging of single layer microspheres

Khuong Ba Dinh, Adabelle X. P. Ong, Hoang Vu Le, Clare A. Henderson, Cuong Van Vuong, Peter Hannaford, Trevor A. Smith, Lap Van Dao

Journal of Applied Physics 117(16) 163102-163102 2015年4月28日査読有り
INFLUENCES OF Sn DOPING CONCENTRATION ON CHARACTERISTICS OF ZnO FILMS FOR SOLAR CELL APPLICATIONS

60(7) 41-46 2015年査読有り
Femtosecond spectrally resolved nonlinear spectroscopy: Study of Si quantum dots

Vuong Van Cuong, Nguyen Dai Hung, Khuong Ba Dinh, Lap Van Dao

2014 Conference on Optoelectronic and Microelectronic Materials & Devices 2014年12月査読有り筆頭著者

講演・口頭発表等

500°C High-Temperature Characteristics of TiN-gate SiC n/p MOSFETs

S. Hiramoto, V. V. Cuong, S. Ishikawa, H. Sezaki, T. Maeda, S.-I. Kuroki

International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023年9月21日
Gamma-ray irradiation effects on 4H-SiC n/p MOSFETs with POA treatment

T. Ozaki, V. V. Cuong, A. Takeyama, T. Ohshima, K. Kojima, Y. Tanaka, S.-I. Kuroki

International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023年9月21日
High-Temperature Characterization of Interface and Near-Interface Traps in 4H-SiC MOS Capacitor with Full-Distributed Circuit Model

V. V. Cuong, T. Meguro, S. Ishikawa, H. Sezaki, T. Maeda, S.-I. Kuroki

International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023年9月20日
High-Temperature Electronics for Harsh Environment Applications

V. V. Cuong, T. Meguro, S. Ishikawa, T. Maeda, H. Sezaki, and S.-I. Kuroki

The 24th Takayanagi Kenjiro Memorial Symposium 2022年11月30日招待有り
Bias temperature stress instability in 4H-SiC capacitors with different metal gate in extremely high temperature environment

V. V. Cuong, K. Koyanagi, T. Meguro, S.-I. Kuroki

The 19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022年9月
Parameter Extraction from Transfer Characteristics Measurement of 4H-SiC MOSFET in Extremely High Temperature Ambient

V. V. Cuong, T. Meguro, S. Ishikawa, T. Maeda, H. Sezaki, S.-I. Kuroki

The 19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022年9月
High-Temperature Operation of 4H-SiC MOSFETs Based Differential Amplifier for Harsh Environment Applications

V. V. Cuong, T. Meguro, S. Ishikawa, T. Maeda, H. Sezaki, S.-I. Kuroki

International Workshop on Nanodevice Technologies (IWNT2022) 2022年3月
Investigation Trap Density in Oxide Layer of 4H-SiC MOS Capacitor During Long-Time Aging at 400℃ Ambient

V. V. Cuong, K. Koyanagi, T. Meguro, S.-I. Kuroki

The 69th JSAP Spring Meeting 2022年3月
High-Temperature Reliability of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate

V. V. Cuong, T. Meguro, S.-I. Kuroki

The 13th European Conference on Silicon Carbide and Related Materials (ECSCRM) 2021年10月27日
500℃ Operation Characteristics of 4H-SiC MOSFETs Differential Amplifier Circuit for Harsh Environment Applications

V. V. Cuong, T. Meguro, K. Kawamura, T. Shima, S.-I. Kuroki

The 13th European Conference on Silicon Carbide and Related Materials (ECSCRM) 2021年10月25日招待有り
High-Temperature Operation of Differential Amplifier Based on 4H-SiC MOSFETs for Harsh Environment Applications

V. V. Cuong, T. Meguro, S.-I. Kuroki

The 82nd JSAP Autumn Meeting 2021年9月
High-Temperature Reliability at 400℃ of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate

V. V. Cuong, T. Meguro, T. Sato, S.-I. Kuroki

The 82nd JSAP Autumn Meeting 2021年9月
Improve the High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contact with CF4:O2 Surface Treatment

V. V. Cuong, S. Ishikawa, T. Maeda, H. Sezaki, T. Meguro, T. Sato, S.-I. Kuroki

The 68th JSAP Spring Meeting 2021年3月
400℃ High-Temperature Reliability of 4H-SiC MOS Capacitor with TiN Metal Gate

V. V. Cuong, S. Ishikawa, T. Maeda, H. Sezaki, S.-I. Kuroki

The 17th Thin Film Materials and Devices Meeting 2020年11月
4H-SiC MOSFETを用いたアナログ回路の温度特性評価

先進パワー半導体分科会第6回講演会 2019年12月
High Temperature Reliability of 4H-SiC Devices and Single Stage 4H-SiC MOSFET Amplifier at 400ºC

V. V. Cuong, S. Ishikawa, T. Maeda, H. Sezaki, K. Muraoka, T. Meguro, S.-I. Kuroki

The International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019年10月
Characterization of 4H-SiC MOS Capacitors with Different Metal Gates after 400°C High-Temperature Aging Tests

V. V. Cuong, S. Ishikawa, T. Maeda, H. Sezaki, S.-I. Kuroki

The International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019年9月
Low Specific Contact Resistance TiNb Ohmic Contacts to 4H-SiC with Laser Annealing for Harsh Environment Applications

V. V. Cuong, T. Kawasaki, S.-I. Kuroki

The 79th JSAP Autumn Meeting 2018年9月
Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC

V. V. Cuong, S. Ishikawa, H. Sezaki, T. Maeda, S. Yasuno, T. Koganezawa, S.-I. Kuroki

The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM) 2018年9月
High-Temperature Reliability of Ni/Nb Ohmic Contacts on 4H-SiC for Harsh Environment Applications

V. V. Cuong, S. Ishikawa, H. Sezaki, T. Maeda, T. Koganezawa, S. Yasuno, T. Miyazaki, S.-I. Kuroki

The 65th JSAP Spring Meeting 2018年3月

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