WATANABE, Takanobu

J-GLOBAL         Last updated: Nov 9, 2018 at 19:43
 
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Name
WATANABE, Takanobu
URL
https://www.watanabe-lab.jp/en/
Affiliation
Waseda University
Section
Faculty of Science and Engineering, School of Fundamental Science and Engineering
Job title
Professor
Degree
Doctor of Engineering(Waseda University)
Research funding number
00367153
ORCID ID
0000-0002-9421-8195

Research Areas

 
 

Academic & Professional Experience

 
Apr 2012
 - 
Today
Professor, Faculty of Science and Engineering, Waseda University
 
Apr 2007
 - 
Mar 2012
Associate Professor, Faculty of Science and Engineering, Waseda University
 
Apr 2005
 - 
Mar 2007
Associate Professor, Faculty of Science and Engineering, Waseda University
 
Oct 2003
 - 
Mar 2007
PRESTO Researcher, Japan Science and Technology Agency
 
Apr 2003
 - 
Feb 2005
Lecturer, Graduate School of Science and Engineering, Waseda University
 

Education

 
Apr 1997
 - 
Mar 1999
Graduate School of Science and Engineering, Waseda University
 
Apr 1995
 - 
Mar 1997
Graduate School, Division of Engineering, Waseda University
 
Apr 1991
 - 
Mar 1995
School of Science and Engieering, Waseda University
 

Awards & Honors

 
Feb 2018
Research Award (High-Impact Publication), Waseda University
 
Feb 2016
Teaching Award, Waseda University
 
Nov 2000
JSAP Young Scientist Presentation Award, The Japan Society of Applied Physics
 
Feb 1999
Inoue Research Award, Inoue Foundation for Science
 

Published Papers

 
Motohiro Tomita, Shunsuke Oba, Yuya Himeda, Ryo Yamato, Keisuke Shima, Takehiro Kumada, Mao Xu, Hiroki Takezawa, Kohhei Mesaki, Kazuaki Tsuda, Shuichiro Hashimoto, Tianzhuo Zhan, Hui Zhang, Yoshinari Kamakura, Yuhhei Suzuki, Hiroshi Inokawa, Hiroya Ikeda, Takashi Matsukawa, Takeo Matsuki, Takanobu Watanabe
IEEE Transactions on Electron Devices      Sep 2018
IEEE We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is fo...
Zhan Tianzhuo, Yamato Ryo, Hashimoto Shuichiro, Tomita Motohiro, Oba Shunsuke, Himeda Yuya, Mesaki Kohei, Takezawa Hiroki, Yokogawa Ryo, Xu Yibin, Matsukawa Takashi, Ogura Atsushi, Kamakura Yoshinari, Watanabe Takanobu
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   19(1) 443-453   May 2018   [Refereed]
Hashimoto Shuichiro, Yokogawa Ryo, Oba Shunsuke, Asada Shuhei, Xu Taiyu, Tomita Motohiro, Ogura Atsushi, Matsukawa Takashi, Masahara Meishoku, Watanabe Takanobu
JOURNAL OF APPLIED PHYSICS   122(14)    Oct 2017   [Refereed]
S. Hashimoto, S. Asada, T. Xu, S. Oba, Y. Himeda, R. Yamato, T. Matsukawa, T. Matsuki, T. Matsuki, T. Watanabe
Applied Physics Letters   111    Jul 2017
© 2017 Author(s). We have found experimentally an anomalous thermoelectric characteristic of an n-type Si nanowire micro thermoelectric generator (μTEG). The μTEG is fabricated on a silicon-on-insulator wafer by electron beam lithography and dry e...
Tomofumi Zushi, Kenji Ohmori, Keisaku Yamada, and Takanobu Watanabe
Physical Review B   91(11) 115308   Mar 2015   [Refereed]
Yokogawa Ryo, Hashimoto Shuichiro, Asada Shuhei, Tomita Motohiro, Watanabe Takanobu, Ogura Atsushi
JAPANESE JOURNAL OF APPLIED PHYSICS   56(6)    Jun 2017   [Refereed]
Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, Kenji Ohmori, Keisaku Yamada, and Takanobu Watanabe
IEEE International Electron Devices Meeting (IEDM 2014) Extended Abstract   713-716   Dec 2014   [Refereed]
Fei Jiayang, Kunugi Ryota, Watanabe Takanobu, Kita Koji
APPLIED PHYSICS LETTERS   110(16)    Apr 2017   [Refereed]
Kunugi Ryota, Nakagawa Nobuhiro, Watanabe Takanobu
APPLIED PHYSICS EXPRESS   10(3)    Mar 2017   [Refereed]
Hiroki Yamashita, Hiroki Kosugiyama, Yasuhiro Shikahama, Shuichiro Hashimoto, Kouhei Takei , Jing Sun, Takashi Matsukawa, Meishoku Masahara, and Takanobu Watanabe
Japanese Journal of Applied Physics   53(8) 085201   Aug 2014   [Refereed]
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)   86-87   2017   [Refereed]
Ryo Kuriyama, Masahiro Hashiguchi, Ryusuke Takahashi, Atsushi Ogura, Shinichi Satoh, and Takanobu Watanabe
Japanese Journal of Applied Physics   53(8) 08LB02-27   Aug 2014   [Refereed]
Nano-scale Evaluation of Electrical Tree Initiation in Silica/Epoxy Nano-composite Thin Film
2017 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS (ISEIM), VOLS 1 & 2   359-362   2017   [Refereed]
Tomofumi Zushi, Kosuke Shimura, Masanori Tomita, Kenji Ohmori, Keisaku Yamada and Takanobu Watanabe
ECS Journal of Solid State Science and Technology   3(5) 149-154   2014   [Refereed]
Shimura Kosuke, Kunugi Ryota, Ogura Atsushi, Satoh Shinichi, Fei Jiayang, Kita Koji, Watanabe Takanobu
JAPANESE JOURNAL OF APPLIED PHYSICS   55(4)    Apr 2016   [Refereed]
Nobuya Mori, Masanori Tomita, Hideki Minari, Takanobu Watanabe, and Nobuyoshi Koshida
Japanese Journal of Applied Physics   52(4) 04CJ04   Apr 2013   [Refereed]
Takei Kohei, Hashimoto Shuichiro, Sun Jing, Zhang Xu, Asada Shuhei, Xu Taiyu, Matsukawa Takashi, Masahara Meishoku, Watanabe Takanobu
JAPANESE JOURNAL OF APPLIED PHYSICS   55(4)    Apr 2016   [Refereed]
Akito Suzuki, Takefumi Kamioka, Yoshinari Kamakura, and Takanobu Watanabe
Japan Society for Simulation Technology   2(1) 211-224   2015   [Refereed]
Zhang Hui, Xu Taiyu, Hashimoto Shuichiro, Watanabe Takanobu
IEEE TRANSACTIONS ON ELECTRON DEVICES   65(5) 2016-2023   May 2018   [Refereed]
Takefumi Kamioka, Fumiya Isono, Takahiro Yoshida, Iwao Ohdomari, and Takanobu Watanabe
Physica State Solidi C   6(6) 1418-1422   2012   [Refereed]
Tomita Motohiro, Ogasawara Masataka, Terada Takuya, Watanabe Takanobu
JAPANESE JOURNAL OF APPLIED PHYSICS   57(4)    Apr 2018   [Refereed]
Takanobu Watanabe
Journal of Computational Electronics   10(1-2) 2-10   Jun 2011   [Refereed]
Watanabe Takanobu
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR   80(1) 313-325   2017   [Refereed]
Tomofumi Zushi, Yoshinari Kamakura, Kenji Taniguchi, Iwao Ohdomari, and Takanobu Watanabe
Japanese Journal of Applied Physics   50(1) 010102   Jan 2011   [Refereed]
Shuichiro Hashimoto, Hiroki Kosugiyama, Kohei Takei, Sung Jing, Yuji Kawamura, Yasuhiro Shikahama, and Takanobu Watanabe
IEEE Xplore      2015
R. Tosaka, H. Tamamoto, I. Ohdomari, and T. Watanabe
Langmuir   26(12) 9950-9955   Jun 2010   [Refereed]
T. Zushi, I. Ohdomari, Y. Kamakura, K. Taniguchi, and T. Watanabe
Japanese Journal of Applied Physics   49(4) 04DN08   2010   [Refereed]
T. Kamioka, K. Sato, Y. Kazama, I. Ohdomari and T. Watanabe
Japanese Journal of Applied Physics   49(1) 015702   2010   [Refereed]
Wu Yan, Hasegawa Hiroyuki, Kakushima Kuniyuki, Ohmori Kenji, Watanabe Takanobu, Nishiyama Akira, Sugii Nobuyuki, Wakabayashi Hitoshi, Tsutsui Kazuo, Kataoka Yoshinori, Natori Kenji, Yamada Keisaku, Iwai Hiroshi
MICROELECTRONICS RELIABILITY   54(5) 899-904   May 2014   [Refereed]
H. Yamamoto, T. Watanabe, and I. Ohdomari
Applied Physics Express   1(10) 105002   Oct 2008   [Refereed]
2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)   357-360   2014   [Refereed]
T. Kamioka, K. Sato, Y. Kazama, T. Watanabe, and I. Ohdomari
Review of Scientific Instruments   79(7) 073707   Jul 2008   [Refereed]
Hashimoto Shuichiro, Kosugiyama Hiroki, Takei Kohei, Sun Jing, Kawamura Yuji, Shikahama Yasuhiro, Ohmori Kenji, Watanabe Takanobu
2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC)      2014   [Refereed]
H. Yamamoto, T. Watanabe, and I. Ohdomari
Journal of Chemical Physics   128(16) 164710   Apr 2008   [Refereed]
Wu Yan, Dou Chunmeng, Wei Feng, Kakushima Kuniyuki, Ohmori Kenji, Ahmet Parhat, Watanabe Takanobu, Tsutsui Kazuo, Nishiyama Akira, Sugii Nobuyuki, Natori Kenji, Yamada Keisaku, Kataoka Yoshinori, Hattori Takeo, Iwai Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS   52(4)    Apr 2013   [Refereed]
Takefumi Kamioka, Hiroya Imai, Yoshinari Kamakura, Kenji Ohmori, Kenji Shiraishi, Masanori Niwa, Keisaku Yamada, and Takanobu Watanabe
IEEE International Electron Devices Meeting (IEDM 2012) Extended Abstract   399-402   Dec 2012
Kamakura Yoshinari, Zushi Tomofumi, Watanabe Takanobu, Mori Nobuya, Taniguchi Kenji
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS   470 14-+   2011   [Refereed]
Kamakura Yoshinari, Mori Nubuya, Taniguchi Kenji, Zushi Tomofumi, Watanabe Takanobu
SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES   89-92   2010   [Refereed]
H. Ohta, T. Watanabe, and I. Ohdomari
Physical Review B   78(15) 155326   Oct 2008   [Refereed]
Takefumi Kamioka, Fumiya Isono, Takanobu Watanabe, and Iwao Ohdomari
表面科学   33 153-158   2012
T. Terunuma, T. Watanabe, T. Shinada, I.Ohdomari, Y. Kamakura, and K. Taniguchi
Extended Abstracts of the 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)   29-32   2008
K. Nishiyama, T. Watanabe, T. Hoshino and I. Ohdomari
Chemical Physics Letters   453(4-6) 279-282   Mar 2008   [Refereed]
A. Seike, T. Tange, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura and I. Ohdomari
Applied Physics Letters   91 202117   2007
T. Watanabe, and I. Ohdomari
Journal of Electrochemical Society   154(12) G260-G267   2007   [Refereed]
K. Nishiyama, T. Watanabe, T. Hoshino and I. Ohdomari
Chemical Physics Letters   439(1-3) 148-150   May 2007   [Refereed]
H. Ohta, T. Watanabe, and I. Ohdomari
Japanese Journal of Applied Physics   46(5B) 3277-3282   May 2007   [Refereed]
T. Watanabe, K. Tatsumura, and I. Ohdomari
Physical Review Letters   96(19) 196102   May 2006   [Refereed]
K. Nishiyama, T. Watanabe, T. Hoshino and I. Ohdomari
Japanese Journal of Applied Physics   45 1021-1025   2006
H. Yamamoto, T. Watanabe, K. Nishiyama, K. Tatsumura, and I. Ohdomari
Journal de Physique IV   132 189-193   2006
K. Nishiyama, T. Watanabe, T. Hoshino and I. Ohdomari
Japanese Journal of Applied Physics   44 8210-8215   2005
K. Tatsumura, T. Shimura, E. Mishima, K. Kawamura, D. Yamasaki, H. Yamamoto, T. Watanabe, M. Umeno, and I. Ohdomari
Physical Review B   72 045205   2005
M. Uchigasaki, T. Tomiki, K. Kamioka, E. Nakayama, T. Watanabe, and I. Ohdomari
Japanese Journal of Applied Physics   44 L313-L314   2005
ダイナミックボンド型分子動力学法の開発
渡邉孝信
化学工業   56 65-71   2005
T. Watanabe, K. Tatsumura, and I. Ohdomari
Applied Surface Science   237 125-133   2004
T. Watanabe, D. Yamasaki, K. Tatsumura, and I. Ohdomari
Applied Surface Science   234 207-213   2004
Residual order within thermally grown amorphous SiO2 on crystalline silicon
K. Tatsumura, T. Watanabe, D. Yamasaki, T. Shimura, M. Umeno, and I. Ohdomari
Physical Review B   69 085212   2004
K. Tatsumura, T. Watanabe, D. Yamasaki, T. Shimura, M. Umeno, and I. Ohdomari
Japanese Journal of Applied Physics   43 492-497   2004
K. Tatsumura, T. Watanabe, D. Yamasaki, T. Shimura, M. Umeno, and I. Ohdomari
Japanese Journal of Applied Physics   42 7250-7255   2003
T. Hoshino, M. Hata, S. Neya, Y. Nishioka, T. Watanabe, K. Tatsumura, and I. Ohdomari
Japanese Journal of Applied Physics   42 6535-6542   2003
T. Hoshino, M. Hata, S. Neya, Y. Nishioka, T. Watanabe, K. Tatsumura, and I. Ohdomari
Japanese Journal of Applied Physics   42 3560-3565   2003
渡邉孝信,辰村光介,大泊 巌
表面科学/日本表面科学会   23 74-80   2002
A. Kitada, T. Konishi and T. Watanabe
Chaos, Solitons and Fractals/Elsevier Science   13 363-366   2002
Nucleation site of Cu on the H-terminated Si(111) surface
Physical Review B/American Physics Society   64    2001
Initial Oxidation Process of Si(001) Simulated by Using a Parallel PC System
T. Watanabe, K. Tatsumura, A. Kajimoto, K. Ogura, Y. Inaba, and I. Ohdomari
Semiconductor Technology/The Electrochemical Society   1 242-246   2001
T. Watanabe, and I. Ohdomari
Applied Surface Science/Elsevier Science   162-163 112-121   2000
Y. Harada, K. Eriguchi, M. Niwa, T. Watanabe, and I. Ohdomari
Japanese Journal of Applied Physics/Japan Society of Applied Physics   39 4687-4691   2000
Impact of Structural Strained Layer near SiO2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
Y. Harada, K. Eriguchi, M. Niwa, T. Watanabe, and I. Ohdomari
VLSI symposium Tech. Digest/Japan Society of Applied Physics   216-219   2000
K. Shimada, T. Ishimaru, T. Watanabe, T. Yamawaki, M. Osuka, T. Hoshino, and I. Ohdomari
Physical Review B/American Physics Society   62 2546-2551   2000
T. Watanabe, and I.Ohdomari
Thin Solid Films/Elsevier Science   343-344 370-373   1999
T. Watanabe, H. Fujiwara, H. Noguchi, T. Hoshino, and I. Ohdomari
Japanese Journal of Applied Physics/Japan Society of Applied Physics   38 L366-L369   1999
T. Ishimaru, T. Hoshino, H. Kawada, K. Shimada, T. Watanabe, I. Ohdomari
Physical Review B/American Physics Society   58 9863-9866   1998
T.Watanabe, T. Handa, T. Hoshino, and I. Ohdomari
Applied Surface Science/Elsevier Science   130-132 6-12   1998
T. Hoshino, N. Kamijo, H. Fujiwara, T. Watanabe, and I.Ohdomari
Surface Science/Elsevier Science   394 119-128   1997
I. Ohdomari, T. Watanabe, K. Kumamoto, and T. Hoshino
Phase Transitions/Oversea Publishers Association   62 245-248   1997
T. Watanabe, T. Hoshino, and I. Ohdomari
Surface Science/Elsevier Science   389 375-381   1997
T. Watanabe, T. Hoshino, and I. Ohdomari
Applied Surface Science/Elsevier Science   117/118 67-71   1997

Misc

 
Takanobu Watanabe
IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai   22-23   Jul 2017
© 2017 IEEE. Energy harvester is a key device for realizing trillion sensors network society. Thermoelectric generator (TEG) is regarded as the ultimate energy harvester to provide semipermanent power from heat energies via Seebeck effect. The rec...

Conference Activities & Talks

 
Molecular Dynamics of Dipole Layer Formation at High-k/SiO2 Interface [Invited]
WATANABE, Takanobu
232nd ECS MEETING   4 Oct 2017   
Formation Mechanisms of Gate Oxide Films [Invited]
WATANABE, Takanobu
2017 International Conference on Solid State Devices and Materials (SSDM 2017)   19 Sep 2017   
Silicon-based Micro Thermoelectric Generator Fabricated by CMOS Compatible Process [Invited]
WATANABE, Takanobu
The 2017 International Meeting for Future of Electron Devices, Kansai (IMFEDK2017)   29 Jun 2017   
A Scalable Si-based Micro Thermoelectric Generator, [Invited]
WATANABE, Takanobu
Electron Devices Technology and Manufacturing Conference (EDTM2017)   2 Mar 2017   
Atomistic Origin of Dipole Layer at High-k/SiO2 Interface [Invited]
WATANABE, Takanobu
13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-13)   10 Oct 2016   
Molecular Dynamics Simulations on the Formation of Dielectric Thin Films and Interface Properties [Invited]
WATANABE, Takanobu
2016 International Conference on Solid State Devices and Materials (SSDM 2016)   26 Sep 2016   
Statistical Simulation of Noise and Fluctuations in Nano-scale Silicon Transistors [Invited]
WATANABE, Takanobu
BIT’s 5th Annual World Congress of Advanced Materials-2016 (WCAM-2016)   8 Jun 2016   
Impacts of RDF, RTN, and Shot Noise on Nanowire Transistor Performance Studied by Ensemble Monte Carlo / Molecular Dynamics Simulation [Invited]
WATANABE, Takanobu
2015 International Conference on Solid State Devices and Materials (SSDM 2015)   29 Sep 2015   
Molecular Dynamics Simulation of Dipole Layer Formation at High-k/SiO2 Interface
WATANABE, Takanobu
226th Meeting of The Electrochemical Society   6 Oct 2014   
Molecular dynamics simulation of gate dielectric thin films [Invited]
WATANABE, Takanobu
The 5th NIMS/MANA-Waseda University International Symposium   24 Mar 2014   
Recent Progress in Molecular Dynamics Simulation of Semiconductor Interfaces [Invited]
WATANABE, Takanobu
2013 NIMS CONFERENCE   3 Jul 2013   
Molecular Dynamics Simulation of Thermal Properties of Nano-scale Silicon Structures Covered with Oxide Film [Invited]
WATANABE, Takanobu
The 3rd Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials (AMDI-3)   7 Nov 2010   
Phonon Dispersion in <100> Si Nanowire Covered with SiO2 Film Calculated by Molecular Dynamics Simulation
WATANABE, Takanobu
PRiME 2012, ECS 222nd Meeting, SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 5   10 Oct 2012   
Force Field Approaches for Modeling Oxide-Semiconductor Interfaces [Invited]
WATANABE, Takanobu
3rd Asian Consortium on Computational Material Science (ACCMS) Working Group Meeting   2 Apr 2011   
Misfit Stress Relaxation Mechanism in GeO2/Ge Systems: A Classical Molecular Simulation Study
WATANABE, Takanobu
ECS 218th meeting   14 Oct 2010   
Atomistic Picture of Silicon Oxidation Process; Beyond the Deal-Grove Model [Invited]
WATANABE, Takanobu
International Conference on Computational & Experimental Engineering and Sciences (ICCES’09)   10 Apr 2009   

Research Grants & Projects

 
Development of Silicon-Based Thermoelectric Device Utilizing Computational Phononics
Japan Science and Technology Agency: Strategic Basic Research Programs, CREST
Project Year: Dec 2015 - Mar 2019    Investigator(s): WATANABE, Takanobu
Japan Science and Technology Agency: Strategic Basic Research Programs, PRESTO
Project Year: Oct 2003 - Mar 2007    Investigator(s): WATANABE, Takanobu
Control of Silicon Nanostructure Oxidation by Nitrogen Doping
Development and application of new kinetic theory for thermal oxidation of silicon replacing the Deal-Grove model
Project Year: Apr 2007 - Mar 2011    Investigator(s): WATANABE, Takanobu
Real-Time Scanning Tunneling Microscopy of Nano-Scale Surface Modification by Dopant Ion Irradiation
Investigator(s): OHDOMARI, Iwao
Development of Simulator for Transient Electrothermal Properties of Nanoscale Devices
Investigator(s): KAMAKURA, Yoshinari