張文馨 (WEN HSIN CHANG) - マイポータル

基本情報

ORCID iD: https://orcid.org/0000-0002-8501-6276
J-GLOBAL ID: 202301008466731306
researchmap会員ID: R000055245

論文

Thermally stable Bi<inf>2</inf>Te<inf>3</inf>/WSe<inf>2</inf> Van Der Waals contacts for pMOSFETs application

Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Naoya Okada, Takahiko Endo, Yasumitsu Miyata, Toshifumi Irisawa

Scientific Reports 14(1) 2024年12月
Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films

Tatsuro Maeda, Hiroyuki Ishii, Wen Hsin Chang, Shiyu Zhang, Shigehisa Shibayama, Masashi Kurosawa, Osamu Nakatsuka

Materials Science in Semiconductor Processing 2024年6月
Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions

Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Toshifumi Irisawa

Applied Physics Express 2024年3月1日
Characterization of band alignment at a metal–MoS2 interface by Kelvin probe force microscopy

Mitsuhiro Okada, Yuki Okigawa, Takeshi Fujii, Takahiko Endo, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Yasumitsu Miyata, Tetsuo Shimizu, Toshitaka Kubo …

Japanese Journal of Applied Physics 2024年1月1日
Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Fumihiko Uesugi, Masaki Takeguchi, Yuji Sutou, Paul Fons

Materials Horizons 10(6) 2254-2261 2023年
Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition

Mitsuhiro Okada, Jiang Pu, Yung-Chang Lin, Takahiko Endo, Naoya Okada, Wen-Hsin Chang, Anh Khoa Augustin Lu, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo …

ACS Nano 2022年7月18日
Transparent Conductive Oxide (TCO) Gated Ingaas Mosfets for Front-Side Illuminated Short-Wave Infrared Detection

Tatsuro Maeda, Kazuaki Oishi, Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu, Tetsuji Shimizu, Akira Endoh, Hiroki Fujishiro, Takashi Koida

ECS Meeting Abstracts 2022年7月7日
Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases

Hiroto Ishii, Wen-Hsin Chang, Hiroyuki Ishii, Mengnan Ke, Tatsuro Maeda

JAPANESE JOURNAL OF APPLIED PHYSICS 61(SD) 2022年6月
Gas-Source Chemical Vapor Deposition of Atomically Thin WS₂ for LSI Device Applications

Toshifumi Irisawa, Mitsuhiro Okada, Naoya Okada, Wen-Hsin Chang

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2022年3月6日
(Invited) Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform

Wen Hsin Chang, T.-Z. Hong, P.-J. Sung, Toshifumi Irisawa, Hiroyuki Ishii, Y.-J. Lee, Tatsuro Maeda

ECS Meeting Abstracts {MA}2021-01(34) 1089-1089 2021年5月30日
One-step chemical vapor deposition of 3D-NbS2/2D-MoS2 metal/semiconductor junctions

Mitsuhiro Okada, Naoya Okada, Wen-Hsin Chang, Toshitaka Kubo, Tetsuo Shimizu, Toshifumi Irisawa, Masatou Ishihara

2021 SILICON NANOELECTRONICS WORKSHOP (SNW) 71-72 2021年
(Invited) epitaxial growth of Ge / III-V films and hetero-layer lift-off for ultra-thin geoi fabrication

Tatsuro Maeda, Toshifumi Irisawa, Hiroyuki Ishii, Wen Hsin Chang

ECS Transactions 98(5) 157-167 2020年
Elastic response of 10-nm insulator films measured by dynamic indentation for nano-scale electron device fabrication

Leonid Bolotov, Noriyuki Uchida, Wen Hsin Chang, Tatsuro Maeda, Shinji Migita

2019 Silicon Nanoelectronics Workshop, SNW 2019 2019年6月1日
Comparative study of high-k dielectric on MoS<inf>2</inf> deposited by plasma enhanced ALD

Wen Hsin Chang, Naoya Okada, Hidehiro Asai, Koichi Fukuda, Mitsuhiro Okada, Takahiko Endo, Yasumitsu Miyata, Toshifumi Irisawa

2019 Silicon Nanoelectronics Workshop, SNW 2019 2019年6月
Significant performance enhancement of UTB GeOI pMOSFETs by advanced channel formation technologies

W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida, T. Maeda

Digest of Technical Papers - Symposium on VLSI Technology 2018-June 191-192 2018年10月25日
Position Control and Gas Source CVD Growth Technologies of 2D MX<inf>2</inf> Materials for Real LSI Applications

T. Irisawa, N. Okada, W. Mizubayashi, T. Mori, W. H. Chang, K. Koga, A. Ando, K. Endo, S. Sasaki, T. Endo …

2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 331-333 2018年7月26日
HEtero-layer-lift-off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs

Wen Hsin Chang, Toshifumi Irisawa, Hiroyuki Ishii, Hiroyuki Hattori, Noriyuki Uchida, Tatsuro Maeda

2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 1-2 2018年7月3日
High performance UTB GeOI n and pMOSFETs featuring hetero-lajer-lift-off (HELLO) technology (invited)

W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida, T. Maeda

ECS Transactions 86(10) 25-34 2018年
InAs MOS-HEMT power detector for 1.0 THz on quartz glass

Eiji Kume, Hiroyuki Ishii, Hiroyuki Hattori, Wen-Hsin Chang, Mutsuo Ogura, Haruichi Kanaya, Tanemasa Asano, Tatsuro Maeda

2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) 196-197 2017年査読有り

MISC

Sb₂Te₃層状膜によるMoS₂上低抵抗コンタクトの実現

CHANG W. H., 畑山祥吾, 齊藤雄太, 岡田直也, 遠藤尚彦, 宮田耕充, 入沢寿史

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023年

共同研究・競争的資金等の研究課題

Geナノシートチャネルの精密構造制御及びvdWコンタクトにおけるキャリア輸送解明

日本学術振興会科学研究費助成事業基盤研究(B) 2023年4月 - 2026年3月

張文馨, 齊藤雄太