論文

査読有り
2016年2月

Influence of voltage on etching rate of hydrogenated amorphous carbon films with HNO3 studied using surface plasmon resonance

JAPANESE JOURNAL OF APPLIED PHYSICS
  • Sarayut Tunmee
  • ,
  • Yasuyuki Nakaya
  • ,
  • XiaoLong Zhou
  • ,
  • Satoru Arakawa
  • ,
  • Keiji Komatsu
  • ,
  • Haruhiko Ito
  • ,
  • Hidetoshi Saitoh

55
2
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.7567/JJAP.55.020302
出版者・発行元
IOP PUBLISHING LTD

Etching of hydrogenated amorphous carbon (a-C:H) films in 0.1 M nitric acid was evaluated using surface plasmon resonance at the applied voltages of 0.0, % -1.0, and 1.0V. The etching rates of the a-C: H films as functions of the applied voltages and etching duration were obtained to be 0.0368 (at 0.0 V), 0.0117 (at % -1.0 V), and 0.0074nm/min (at 1.0 V). These results clearly indicate that the etching rates decrease significantly under the conditions of applying positive or negative voltage, demonstrating the enhanced corrosion resistance of the a-C:H films upon applying voltage. (C) 2016 The Japan Society of Applied Physics


リンク情報
DOI
https://doi.org/10.7567/JJAP.55.020302
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000369005300002&DestApp=WOS_CPL
ID情報
  • DOI : 10.7567/JJAP.55.020302
  • ISSN : 0021-4922
  • eISSN : 1347-4065
  • Web of Science ID : WOS:000369005300002

エクスポート
BibTeX RIS