Neutron irradiation effects have been investigated for radiation damage in self-ion implanted silicon. Si samples implanted with (0.5-2)x10(15) Si/cm(2) were neutron-irradiated in a nuclear reactor at elevated temperatures. Rutherford backscattering/channeling measurements revealed that the annealing of heavily disordered (not amorphized) samples was enhanced by the neutron irradiation. The observed annealing behaviors were compared with the previously reported ion-beam-annealing studies.