Tin (Sn) doped silicon dioxide (SiO2) thin films, for use in optical electronic devices, were prepared by the sputtering deposition method using two kinds of mixed powder targets. One of them was a metal mixed powder target of Sn and SiO2, and the others was a metal-oxide powder target of SnO2 and SiO2. Experimental results suggest that Sn doped SiO2 thin films can be prepared by the method using both powder targets. The properties of processing plasma, such as electron density and temperature, emission species, and the elements concentration ratio of the prepared films can be controlled by the ratio of the SnO2 and SiO2 powder target mixture using a SnO2 + SiO2 target. However, it is hard to control the processing plasma and elements concentration ratio of the prepared films using a Sn + SiO2 target. (C) 2018 The Japan Society of Applied Physics