2010年11月
Spin-polarized semiconductor surface states localized in subsurface layers
PHYSICAL REVIEW B
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- 巻
- 82
- 号
- 20
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevB.82.201307
- 出版者・発行元
- AMER PHYSICAL SOC
A pair of different surface-state and surface-resonance bands has been identified on Bi/Ge(111)-(root 3 x root 3)R30 degrees by a combined experimental and computational study. The wave functions of the states have negligible amplitude at Bi atoms and are extended over more than 20 subsurface layers. These bands exhibit characteristic spin structure, which is ascribed to the combined Rashba and atomic spin-orbit interaction (SOI). Unlike previously known surface Rashba systems, the spin polarization is induced by SOI of a light element (Ge) with negligible contribution of a heavier one (Bi).
- リンク情報
- ID情報
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- DOI : 10.1103/PhysRevB.82.201307
- ISSN : 1098-0121
- ORCIDのPut Code : 27069987
- Web of Science ID : WOS:000284092200001
- ORCIDで取得されたその他外部ID : a:1:{i:0;a:1:{s:8:"other-id";s:19:"WOS:000284092200001";}}