2020年10月1日
The effect of ion irradiation on dephasing of coherent optical phonons in GaP
AIP Advances
- ,
- ,
- 巻
- 10
- 号
- 10
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/5.0020810
The dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of defects by means of Ga-ion irradiation. The maximum dephasing time observed at room temperature is 9.1 ps at a Ga+ ion dose of 1013/cm2, which is significantly longer than the value of 8.3 ps for GaP before ion irradiation. The longer dephasing time is explained in terms of the suppression of electron-LO-phonon scattering by the presence of defect-induced deep levels.
- リンク情報
- ID情報
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- DOI : 10.1063/5.0020810
- eISSN : 2158-3226
- ORCIDのPut Code : 81640028
- SCOPUS ID : 85092734817