2002年2月
Rotational honeycomb epitaxy of Ru thin films on sapphire (0001) substrate
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
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- 巻
- 41
- 号
- 2B
- 開始ページ
- L206
- 終了ページ
- L208
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1143/JJAP.41.L206
- 出版者・発行元
- INST PURE APPLIED PHYSICS
Rotational honeycomb epitaxy of hexagonal Ru films was achieved on c-plane sapphire substrates by pulsed laser ablation with the a-axis ratio of root3. The crystal structure and crystallinity of the Ru films were examined by X-ray diffraction and pole figure measurements, respectively. The Ru films were found to be epitaxially grown with an a-axis rotation by 30degrees around the a-axis of sapphire. resulting in the crystallographic-relationship of (0001)Ru // (0001) sapphire and (11 (2) over bar0) Ru // (10 (1) over bar0) sapphire. This is because the lattice mismatch between (11 (2) over bar0) Ru and (10 (1) over bar0) sapphire is as small as about 1.3%.
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.41.L206
- ISSN : 0021-4922
- Web of Science ID : WOS:000176443800015