Rotational honeycomb epitaxy of hexagonal Ru films was achieved on c-plane sapphire substrates by pulsed laser ablation with the a-axis ratio of root3. The crystal structure and crystallinity of the Ru films were examined by X-ray diffraction and pole figure measurements, respectively. The Ru films were found to be epitaxially grown with an a-axis rotation by 30degrees around the a-axis of sapphire. resulting in the crystallographic-relationship of (0001)Ru // (0001) sapphire and (11 (2) over bar0) Ru // (10 (1) over bar0) sapphire. This is because the lattice mismatch between (11 (2) over bar0) Ru and (10 (1) over bar0) sapphire is as small as about 1.3%.