2019年4月
Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface
AIP ADVANCES
- ,
- ,
- ,
- ,
- ,
- 巻
- 9
- 号
- 4
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.5088541
- リンク情報
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- DOI
- https://doi.org/10.1063/1.5088541
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000466614700004&DestApp=WOS_CPL
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85063755503&origin=inward 本文へのリンクあり
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85063755503&origin=inward
- ID情報
-
- DOI : 10.1063/1.5088541
- ISSN : 2158-3226
- eISSN : 2158-3226
- SCOPUS ID : 85063755503
- Web of Science ID : WOS:000466614700004