2020年8月
Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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- 巻
- 115
- 号
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.mssp.2020.105104
- 出版者・発行元
- ELSEVIER SCI LTD
We study influences of the Ge-on-Insulator (GOI) fabrication and its surface passivation by deposition of a hydrogenated amorphous Si (a-Si:H) layer on light emission properties from a strained Ge. It is shown that the GOI fabrication leads to drastic enhancements of room temperature photoluminescence (PL). One of the origins is elimination of a defective Ge layer inevitably formed due to strain-relaxation. We also find that the surface passivation with the a-Si:H layer can further enhance the PL intensity provided that the dopant type, porn, of the a-Si:H matches that of the Ge. As a result, we obtain the PL intensity enhancements up to 15 times compared to as-grown Ge-on-Si, which indicates that the GOI surface-passivated with a-Si:H is a promising structure toward Ge-based high efficient light emitters on the Si platform.
- リンク情報
- ID情報
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- DOI : 10.1016/j.mssp.2020.105104
- ISSN : 1369-8001
- eISSN : 1873-4081
- Web of Science ID : WOS:000535469600009