© The Electrochemical Society We fabricate tensile-strained SiGe layers on patterned Ge-on-Si(111) and investigate their surface morphologies and strain states. It is demonstrated that the surface ridge involving crack formation is completely avoided by the patterning of the Ge-on-Si. Resultantly, the 160 nm thick SiGe with a Ge concentration of 75% is pseudomorphically grown on the patterned Ge-on-Si. This thickness largely exceeds the critical thickness of strained SiGe grown a Ge substrate, meaning that the critical thickness can be increased by the patterning. We can, therefore, say that this method is promising for strained SiGe-based spintronics and high mobility device applications.