論文

査読有り
2016年6月

Interfacial Charge-Carrier Trapping in CH3NH3PbI3-Based Heterolayered Structures Revealed by Time-Resolved Photoluminescence Spectroscopy

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
  • Yasuhiro Yamada
  • ,
  • Takumi Yamada
  • ,
  • Ai Shimazaki
  • ,
  • Atsushi Wakamiya
  • ,
  • Yoshihiko Kanemitsu

7
11
開始ページ
1972
終了ページ
1977
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1021/acs.jpclett.6b00653
出版者・発行元
AMER CHEMICAL SOC

The fast-decaying component of photoluminescence (PL) under very weak pulse photoexcitation is dominated by the rapid relaxation of the photoexcited carriers into a small number of carrier-trapping defect states. Here, we report the subnanosecond decay of the PL under excitation weaker than 1 nJ/cm(2) both in CH3NH3PbI3-based heterostructures and bare thin films. The trap-site density at the interface was evaluated on the basis of the fluence-dependent PL decay profiles. It was found that high-density defects determining the PL decay dynamics are formed near the interface between CH3NH3PbI3 and the hole-transporting Spiro-OMeTAD but not at the CH3NH3PbI3/TiO2 interface and the interior regions of CH3NH3PbI3 films. This finding can aid the fabrication of high-quality heterointerfaces, which are required improving the photoconversion efficiency of perovskite-based solar cells.

Web of Science ® 被引用回数 : 42

リンク情報
DOI
https://doi.org/10.1021/acs.jpclett.6b00653
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000377239200006&DestApp=WOS_CPL

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