Oct, 2006
Direct observation of vacancy in silicon using sub-Kelvin ultrasonic measurements
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
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- Volume
- 134
- Number
- 2-3
- First page
- 233
- Last page
- 239
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1016/j.mseb.2006.07.038
- Publisher
- ELSEVIER SCIENCE SA
We carried out sub-Kelvin ultrasonic measurements for observation of vacancies in crystalline silicon. The longitudinal elastic constants of non-doped and B-doped floating zone (FZ) silicon crystals in commercial base revealed low-temperature elastic softening below 20 K. The applied magnetic fields turns the softening of the B-doped FZ silicon to a temperature-independent behavior, while the fields up to 16 T at base temperature 20 mK make no effect on the softening of the non-doped FZ silicon. This result means that the vacancy accompanying the non-magnetic charge state V-0 in the non-doped silicon and the magnetic V+ in the B-doped silicon is responsible for the low-temperature softening through the Jahn-Teller effect. The direct observation of the vacancy using the sub-Kelvin ultrasonic measurements advances point defects controlling in silicon wafers and semiconductor devices. (c) 2006 Elsevier B.V. All rights reserved.
- Link information
- ID information
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- DOI : 10.1016/j.mseb.2006.07.038
- ISSN : 0921-5107
- Web of Science ID : WOS:000242511800025