2002年5月
In situ luminescence measurement of silica under soft X-ray and gamma-ray irradiations
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
- ,
- ,
- ,
- 巻
- 191
- 号
- 開始ページ
- 382
- 終了ページ
- 386
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/S0168-583X(02)00545-1, 10.1016/s0168-583x(02)00545-1
- 出版者・発行元
- ELSEVIER SCIENCE BV
In situ luminescence measurements of silica glasses induced by gamma-ray and soft X-ray irradiations have been applied to study the dynamic effects of these ionizing radiations on silica. The emission band at 3.1 eV, assigned to 13,, an oxygen deficient center, was observed for both gamma-ray and soft X-ray irradiations. The intensity of the 3.1 eV band first increased, followed by gradual decrease with the irradiation time. The first increase of the band intensity may indicate the production of the B-2beta center from its precursors by gamma- and soft X-ray irradiations. The following decrease indicates the transformation of the B-2beta center to other types of oxygen deficiencies like E' centers.
In spite of the large difference between gamma- and soft X-ray energies, all the luminescence yields showed similar dependence on the absorbed dose, suggesting that the changes in the luminescence under the gamma- and soft X-ray irradiations are mainly caused by secondary electrons and photons with low energy but not by direct excitation of primary (Compton) or high energy electrons and photons.
Nevertheless, the luminescence yield induced by the soft X-rays showed very strong incident X-ray energy dependence in the energy region around Si K-edge. The excitation process of the inner-shell electrons would be also an important factor for the production of low energy secondary electrons and photons, closely relating to the changes in the luminescence yield. (C) 2002 Elsevier Science B.V. All rights reserved.
In spite of the large difference between gamma- and soft X-ray energies, all the luminescence yields showed similar dependence on the absorbed dose, suggesting that the changes in the luminescence under the gamma- and soft X-ray irradiations are mainly caused by secondary electrons and photons with low energy but not by direct excitation of primary (Compton) or high energy electrons and photons.
Nevertheless, the luminescence yield induced by the soft X-rays showed very strong incident X-ray energy dependence in the energy region around Si K-edge. The excitation process of the inner-shell electrons would be also an important factor for the production of low energy secondary electrons and photons, closely relating to the changes in the luminescence yield. (C) 2002 Elsevier Science B.V. All rights reserved.
- リンク情報
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- DOI
- https://doi.org/10.1016/S0168-583X(02)00545-1
- DOI
- https://doi.org/10.1016/s0168-583x(02)00545-1
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000176692300074&DestApp=WOS_CPL
- URL
- http://orcid.org/0000-0002-2540-0225
- ID情報
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- DOI : 10.1016/S0168-583X(02)00545-1
- DOI : 10.1016/s0168-583x(02)00545-1
- ISSN : 0168-583X
- eISSN : 1872-9584
- ORCIDのPut Code : 9876429
- Web of Science ID : WOS:000176692300074