We carried out plasma enhanced chemical vapor deposition using a plasma jet at atmospheric pressure for one-dimensional deposition of SiO(2) films and ZnO compounds, and measured the film quality by Fourier transform infrared spectroscopy. In the case of SiO(2), the deposition rate was about 400 nm/s and the breakdown voltage was 5 x 10(5) V/cm. On the other hand, in the case of ZnO, the deposition rate was about 160 nm/s. However, as-prepared films contained much carbon contamination, so it is necessary to anneal the compounds in order to obtain high-quality films. After 1-hour annealing at 500 degrees C in air, the transparency was more than 80% in visible light range and the drop of the transparency at around 370 nm corresponding to ZnO band-edge energy. Moreover, the resistivity of the annealed ZnO compounds was estimated to be about 10(6) Omega cm, so we could obtain the transparent and semiconductor-like ZnO compounds successfully.