Yuki Kumagai

Profile Information

Affiliation: Department of Electrical and Electronic Engineering, Toyota National College of Technology

Degree: 博士（工学）(東北大学)

J-GLOBAL ID: 201801013513523117
researchmap Member ID: B000292799

Research Interests

半導体工学

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

Research History

Apr, 2018 - Present

豊田工業高等専門学校

Awards

Sep, 2014

優秀論文賞, Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

Tomoyuki Suwa, Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Xiang Li, Yukihisa Nakao, Masashi Yamamoto, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori

Papers

Improvement of Non-Uniform Temperature Distributions in Intrinsic Josephson Junction Stacks

Dai Oikawa, Keita Tsuzuki, Yuki Kumagai, Haruki Mitarai, Hiroya Andoh, Toko Sugiura, Takehiko Tsukamoto

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 31(5), Aug, 2021
Numerical analysis of temperature and current distributions in large-size intrinsic Josephson junctions with self-heating

Dai Oikawa, Haruki Mitarai, Hiromi Tanaka, Keita Tsuzuki, Yuki Kumagai, Toko Sugiura, Hiroya Andoh, Takehiko Tsukamoto

AIP ADVANCES, 10(8), Aug, 2020
10Mfps 960 Frames Video Capturing Using a UHS Global Shutter CMOS Image Sensor with High Density Analog Memories

Manabu Suzuki, Masashi Suzuki, Rihito Kuroda, Yuki Kumagai, Akira Chiba, Noriyuki Miura, Naoya Kuriyama, Shigetoshi Sugawa

2017 International Image Sensor Workshop, 308-311, May 31, 2017 Peer-reviewed
An over 1Mfps global shutter CMOS image sensor with 480 frame storage using vertical analog memory integration

M. Suzuki, M. Suzuki, R. Kuroda, Y. Kumagai, A. Chiba, N. Miura, N. Kuriyama, S. Sugawa

Technical Digest - International Electron Devices Meeting, IEDM, 8.5.1-8.5.4, Jan 31, 2017 Peer-reviewed
An Over 1Mfps Global Shutter CMOS Image Sensor with 480 Frame Storage Using Vertical Analog Memory Integration

M. Suzuki, M. Suzuki, R. Kuroda, Y. Kumagai, A. Chiba, N. Miura, N. Kuriyama, S. Sugawa

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016 Peer-reviewed
Introduction of Atomically Flattening of Si Surface to Large-Scale Integration Process Employing Shallow Trench Isolation

Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Yutaka Kamata …

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 5(2) P67-P72, 2016 Peer-reviewed
Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface

Tetsuya GOTO, Rihito KURODA, Tomoyuki SUWA, Akinobu TERAMOTO, Toshiki OBARA, Daiki KIMOTO, Shigetoshi SUGAWA, Yutaka KAMATA, Yuki KUMAGAI, Katsuhiko SHIBUSAWA

IEICE Technical Report, Silicon Devices and Materials, SDM2017-74 17-22, Oct, 2015 Peer-reviewed
Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers

Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi …

JAPANESE JOURNAL OF APPLIED PHYSICS, 54(4), Apr, 2015 Peer-reviewed
Low temperature atomically flattening of Si surface of shallow trench isolation pattern

T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S. Sugawa, T. Ohmi, Y. Kamata, Y. Kumagai …

ECS Transactions, 66(5) 285-292, 2015 Peer-reviewed
Low temperature atomically flattening of Si surface of shallow trench isolation pattern

T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S. Sugawa, T. Ohmi, Y. Kamata, Y. Kumagai …

ECS Transactions, 66(5) 285-292, 2015 Peer-reviewed
A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s

Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 26(3) 288-295, Aug, 2013 Peer-reviewed
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species (vol 52, 031302, 2013)

Tomoyuki Suwa, Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Xiang Li, Yukihisa Nakao, Masashi Yamamoto, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita …

JAPANESE JOURNAL OF APPLIED PHYSICS, 52(6), Jun, 2013 Peer-reviewed
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

Tomoyuki Suwa, Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Xiang Li, Yukihisa Nakao, Masashi Yamamoto, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita …

JAPANESE JOURNAL OF APPLIED PHYSICS, 52(3), Mar, 2013 Peer-reviewed
Demonstrating Distribution of SILC Values at Individual Leakage Spots

Takuya Inatsuka, Rihito Kuroda, Akinobu Teramoto, Yuki Kumagai, Shigetoshi Sugawa, Tadahiro Ohmi

2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), GD.5.1, 2013 Peer-reviewed
Changes in SiO2/Si(100) Interface Structure Induced by Forming Gas Annealing

Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi

221st Meeting of The Electrochemical Society, Abs.712, May, 2012 Peer-reviewed
Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6nm Oxide Films

Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

JAPANESE JOURNAL OF APPLIED PHYSICS, 51(4), Apr, 2012 Peer-reviewed
A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80,000 MOSFETs in 80 s

Y. Kumagai, T. Inatsuka, R. Kuroda, A. Teramoto, T. Suwa, S. Sugawa, T. Ohmi

2012 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 131-136, 2012 Peer-reviewed
Influence of Forming Gas Annealing on SiO2/Si(100) Interface Structures Formed Utilizing Oxygen Molecules Different From That Utilizing Oxygen Radicals

Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi

DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES, 45(3) 453-460, 2012 Peer-reviewed
Evaluation for Anomalous Stress-Induced Leakage Current of Gate SiO2 Films Using Array Test Pattern

Yuki Kumagai, Akinobu Teramoto, Takuya Inatsuka, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(10) 3307-3313, Oct, 2011 Peer-reviewed
Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal-Oxide-Semiconductor Field-Effect Transistor Electrical Characteristics

Yuki Kumagai, Kenichi Abe, Takafumi Fujisawa, Shunichi Watabe, Rihito Kuroda, Naoto Miyamoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

JAPANESE JOURNAL OF APPLIED PHYSICS, 50(10), Oct, 2011 Peer-reviewed

Misc.

極低温下におけるPN接合特性の評価と評価環境の検討

大塚冬偉, 及川大, 熊谷勇喜

令和5年度電気・電子・情報関係学会東海支部連合大会, Aug, 2023
Numerical simulations of c-axis temperature distributions in intrinsic Josephson junctions

及川大, 都築啓太, 熊谷勇喜, 安藤浩哉, 杉浦籐虎, 塚本武彦

応用物理学会春季学術講演会講演予稿集(CD-ROM), 69th, 2022
Synchronization of each junctions in mesa-type intrinsic Josephson junctions with temperature distributions

及川大, 都築啓太, 熊谷勇喜, 安藤浩哉, 杉浦籐虎, 塚本武彦

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Flux Dependence of Bi2212 Single Crystal using Self-Flux Melting Methods

水谷有希, 三井俊樹, 及川大, 都築啓太, 熊谷勇喜, 杉浦藤虎, 安藤浩哉, 塚本武彦

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 81st, 2020
Evaluation of Crossing Shape Bi-2212 superconducting devices properties

竹内響, 及川大, 都築啓太, 熊谷勇喜, 杉浦藤虎, 安藤浩哉, 塚本武彦

電気・電子・情報関係学会東海支部連合大会講演論文集(CD-ROM), 2020, 2020
Numerical Simulation of Temperature Distribution in Large Size Intrinsic Josephson junctions

御手洗陽紀, 及川大, 田中博美, 都築啓太, 熊谷勇喜, 安藤浩哉, 杉浦藤虎, 塚本武彦

応用物理学会春季学術講演会講演予稿集(CD-ROM), 67th, 2020
Flux Effect of Grown Bi2212 Single Crystal by using Flux Melting Method

及川大, 田中博美, 三井俊樹, 水谷有希, 都築啓太, 熊谷勇喜, 安藤浩哉, 杉浦籐虎, 塚本武彦

応用物理学会春季学術講演会講演予稿集(CD-ROM), 67th, 2020
An Ultra‐High Speed Global Shutter CMOS Image Sensor with High Density Analog Memories

鈴木学, 鈴木将, 黒田理人, 熊谷勇喜, 千葉亮, 三浦規之, 栗山尚也, 須川成利

映像情報メディア学会技術報告, 41(10(IST2017 8-19)) 7‐10-10, Mar 3, 2017
Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology

GOTO Tetsuya, KURODA Rihito, AKAGAWA Naoya, SUWA Tomoyuki, TERAMOTO Akinobu, LI Xiang, OBARA Toshiki, KIMOTO Daiki, SUGAWA Shigetoshi, OHMI Tadahiro …

Technical report of IEICE. SDM, 114(255) 7-12, Oct 16, 2014
Clear Difference between the Chemical Structure of SiO_2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules

SUWA Tomoyuki, KUMAGAI Yuki, TERAMOTO Akinobu, KINOSHITA Toyohiko, MURO Takayuki, HATTORI Takeo, OHMI Tadahiro

Technical report of IEICE. SDM, 111(249) 49-52, Oct 13, 2011
Statistical Evaluations of Generation and Recovery Characteristics of Anomalous Stress Induced Leakage Current

稲塚卓也, 熊谷勇喜, 黒田理人, 寺本章伸, 須川成利, 大見忠弘

電子情報通信学会技術研究報告, 111(249(SDM2011 97-114)) 11-16, Oct 13, 2011
Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals

SUWA Tomoyuki, KUMAGAI Yuki, TERAMOTO Akinobu, OHMI Tadahiro, HATTORI Takeo, KINOSHITA Toyohiko, MURO Takayuki

IEICE technical report, 110(241) 61-65, Oct 14, 2010
Correlation between Stress Induced Leakage Current and Random Telegraph Signal noise

KUMAGAI Yuki, TERAMOTO Akinobu, ABE Kenichi, FUJISAWA Takafumi, WATABE Shunichi, SUWA Tomoyuki, MIYAMOTO Naoto, SUGAWA Shigetoshi, OHMI Tadahiro

IEICE technical report, 108(236) 57-62, Oct 2, 2008
Statistical Evaluation of Localized Low Gate Current through Tunnel Dielectric using Integrated Array TEG

KUMAGAI Yuki, TERAMOTO Akinobu, SUGAWA Shigetoshi, SUWA Tomoyuki, OHMI Tadahiro

IEICE technical report, 107(85) 27-32, May 31, 2007
Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O_2/NO Plasma Oxynitridation

SUWA Tomoyuki, KUMAGAI Yuki, TERAMOTO Akinobu, SUGAWA Shigetoshi, OHMI Tadahiro

IEICE technical report, 106(277) 7-11, Sep 28, 2006
Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation

SUWA Tomoyuki, TAKAHASHI Hiroto, KUMAGAI Yuki, FUJITA Genya, TERAMOTO Akinobu, SUGAWA Shigetoshi, OHMI Tadahiro

2006 296-297, Sep 13, 2006

Professional Memberships

Research Projects

Novel Microscale Shape Memory Materials for Advanced Medical Applications Using Lead-Free Ferroelectrics

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2019 - Mar, 2022

Imaizumi Fuminobu

Profile Information

Research Interests

Research Areas

Research History

Awards

Papers

Misc.

Professional Memberships

Research Projects

Menu

Coauthors