論文

査読有り
2020年7月

Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO3 films

Applied Physics Express
  • Naoki Shikama
  • ,
  • Yuki Sakishita
  • ,
  • Fuyuki Nabeshima
  • ,
  • Yumiko Katayama
  • ,
  • Kazunori Ueno
  • ,
  • Atsutaka Maeda

13
8
開始ページ
083006
終了ページ
083006
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.35848/1882-0786/aba649
出版者・発行元
{IOP} Publishing

We investigated the gate voltage dependence ofT(c)in electrochemically etched FeSe films with an electric-double layer transistor structure. TheT(c)(zero)value of the etched FeSe films with a lower gate voltage (V-g = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhancedT(c)remains unchanged even after the discharge process. Our results suggest that the origin of the increase inT(c)is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.

Web of Science ® 被引用回数 : 13

リンク情報
DOI
https://doi.org/10.35848/1882-0786/aba649
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000558930500001&DestApp=WOS_CPL
ID情報
  • DOI : 10.35848/1882-0786/aba649
  • ISSN : 1882-0778
  • eISSN : 1882-0786
  • ORCIDのPut Code : 91796052
  • Web of Science ID : WOS:000558930500001

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