Papers

Aug 1, 2020

Chemical pressure effect of the electron-doped FeSe films with an electric double-layer-transistor structure

Journal of Physics: Conference Series

N Shikama
Y Sakishita
F Nabeshima
A Maeda

Volume: 1590
Number
First page: 012012
Last page: 012012
Language
Publishing type: Research paper (scientific journal)
DOI: 10.1088/1742-6596/1590/1/012012
Publisher: {IOP} Publishing

Link information

DOI: https://doi.org/10.1088/1742-6596/1590/1/012012
URL: https://iopscience.iop.org/article/10.1088/1742-6596/1590/1/012012/pdf
URL: https://iopscience.iop.org/article/10.1088/1742-6596/1590/1/012012

ID information

DOI : 10.1088/1742-6596/1590/1/012012
ISSN : 1742-6588
eISSN : 1742-6596
ORCID - Put Code : 91796084

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