2021年10月
Adatom-induced dislocation annihilation in epitaxial silicene
2D MATERIALS
- ,
- 巻
- 8
- 号
- 4
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1088/2053-1583/ac15da
- 出版者・発行元
- IOP PUBLISHING LTD
The transformation of the stripe domain structure of spontaneously-formed
epitaxial silicene on ZrB$_2$ thin film into a single-domain driven by the
adsorption of a fraction of a monolayer of silicon was used to investigate how
dislocations react and eventually annihilate in a two-dimensional honeycomb
structure. The in-situ real time STM monitoring of the evolution of the domain
structure after Si deposition revealed the mechanisms leading to the nucleation
of a single-domain into a domain structure through a stepwise reaction of
partial dislocations. After its nucleation, the single-domain extends by the
propagation of edge dislocations at its frontiers. The identification of this
particular nucleation-propagation formation of dislocation-free silicene sheet
provides insights into how crystallographic defects can be healed in
two-dimensional materials.
epitaxial silicene on ZrB$_2$ thin film into a single-domain driven by the
adsorption of a fraction of a monolayer of silicon was used to investigate how
dislocations react and eventually annihilate in a two-dimensional honeycomb
structure. The in-situ real time STM monitoring of the evolution of the domain
structure after Si deposition revealed the mechanisms leading to the nucleation
of a single-domain into a domain structure through a stepwise reaction of
partial dislocations. After its nucleation, the single-domain extends by the
propagation of edge dislocations at its frontiers. The identification of this
particular nucleation-propagation formation of dislocation-free silicene sheet
provides insights into how crystallographic defects can be healed in
two-dimensional materials.
- リンク情報
-
- DOI
- https://doi.org/10.1088/2053-1583/ac15da
- arXiv
- http://arxiv.org/abs/arXiv:2010.07519
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000682148100001&DestApp=WOS_CPL
- URL
- http://arxiv.org/abs/2010.07519v1
- URL
- http://arxiv.org/pdf/2010.07519v1 本文へのリンクあり
- ID情報
-
- DOI : 10.1088/2053-1583/ac15da
- ISSN : 2053-1583
- arXiv ID : arXiv:2010.07519
- Web of Science ID : WOS:000682148100001