2015年8月
Gaseous tritium uptake by C deposition layer on tungsten
JOURNAL OF NUCLEAR MATERIALS
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- 巻
- 463
- 号
- 開始ページ
- 1017
- 終了ページ
- 1020
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.jnucmat.2014.11.052
- 出版者・発行元
- ELSEVIER SCIENCE BV
Tritium (T) uptake by exposure to gaseous T on deuterated C deposition layer on W was investigated. The C deposition layer were prepared by mixed D and C ion irradiation. The specimens were exposed to D an T mixed gas at 423 and 573 K. The additional T retention by gas exposure at 573 K was about 4 times higher than that by gas exposure at 423 K. Further heating from 573 to 673 K in vacuum after the gas exposure, resulted in more than 70% of retained T stayed after heating at 673 K. That should be due to changing of nature of trap sites in C deposition layer during experiments. These results suggest that additional T trapped in such trap sites require higher temperature to remove retained T in such trap sites. (C) 2014 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.jnucmat.2014.11.052
- ISSN : 0022-3115
- eISSN : 1873-4820
- ORCIDのPut Code : 15243140
- Web of Science ID : WOS:000358467200220