2013年8月
Temperature Dependence of Highly Excited Exciton Polaritons in Semiconductor Microcavities
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
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- 巻
- 82
- 号
- 8
- 開始ページ
- 084709
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7566/JPSJ.82.084709
- 出版者・発行元
- PHYSICAL SOC JAPAN
Observations of polariton condensation in semiconductor microcavities suggest that polaritons can be exploited as a novel type of laser with low input-power requirements. The low-excitation regime is approximately equivalent to thermal equilibrium, and a higher excitation results in more dominant nonequilibrium features. Although standard photon lasing has been experimentally observed in the high excitation regime, e-h pair binding can still remain even in the high-excitation regime theoretically. Therefore, the photoluminescence with a different photon lasing mechanism is predicted to be different from that with a standard photon lasing. In this paper, we report the temperature dependence of the change in photoluminescence with the excitation density. The second threshold behavior transited to the standard photon lasing is not measured at a low-temperature, high-excitation power regime. Our results suggest that there may still be an electron-hole pair at this regime to give a different photon lasing mechanism.
- リンク情報
- ID情報
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- DOI : 10.7566/JPSJ.82.084709
- ISSN : 0031-9015
- Web of Science ID : WOS:000322374300036