2018年1月
γ-Ray Radiation Effects on an HfO<inf>2</inf>-Based Resistive Memory Device
IEEE Transactions on Nanotechnology
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 17
- 号
- 1
- 開始ページ
- 61
- 終了ページ
- 64
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/TNANO.2017.2661818
© 2017 IEEE. In this paper, electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after γ-ray radiation with various total ionizing doses (TIDs). The device can still function properly even if irradiated with a TID of 20 Mrad(Si). The small changes of resistance states and set/reset voltages induced by γ-ray radiation can hardly influence the proper function of the device. The γ-ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure. The radiation effects on the resistive switching memory device show little dependence on the cell area. The results suggest that the HfO2-based resistive switching memory device has good γ-ray radiation-resistant capability.
- リンク情報
- ID情報
-
- DOI : 10.1109/TNANO.2017.2661818
- ISSN : 1536-125X
- SCOPUS ID : 85040722914