2017年12月1日
The phosphorene under the external electronic field and strain
International Journal of Modern Physics C
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- 巻
- 28
- 号
- 12
- 開始ページ
- 1750131
- 終了ページ
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1142/S0129183117501315
© 2017 World Scientific Publishing Company. Using the ab initio plane-wave ultrasoft pseudopotential method based on the generalized gradient approximation (GGA), we investigate the bandgap tuning in monolayer phosphorene in terms of applying external electric fields perpendicular to the layers. The bandgap continuously decreases with the applied electric fields, eventually rendering them metallic. The phenomenon is explained by the giant stark effect. The interlayer P-P distance also result in the semiconductor-to-metal transition. The phosphorene exhibits the significant bandgap tuning ability under different strains with 5% variation. Our investigations show the bandgap change for the fabrication of novel electronic and photonic devices.
- リンク情報
- ID情報
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- DOI : 10.1142/S0129183117501315
- ISSN : 0129-1831
- SCOPUS ID : 85040630210