神谷 格

Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices 

AIP Advances 8(1) 2018年1月1日  査読有り

Up-converted photoluminescence in InAs/GaAs heterostructures 

JOURNAL OF CRYSTAL GROWTH 477 54-58 2017年11月  査読有り

Graphitic carbon nitride modified {001}-faceted TiO2 nanosheet photoanodes for efficient quantum dot sensitized solar cells 

SUPERLATTICES AND MICROSTRUCTURES 109 860-868 2017年9月  査読有り

Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction 

JAPANESE JOURNAL OF APPLIED PHYSICS 56(8) 08MA06.1‐08MA06.4 2017年8月  査読有り

Dynamics of Photogenerated Charge Carriers on Ni- and Ta-Doped SrTiO3 Photocatalysts Studied by Time-Resolved Absorption and Emission Spectroscopy 

JOURNAL OF PHYSICAL CHEMISTRY C 120(15) 7997-8004 2016年4月  査読有り

Realization of Conductive AIN Epitaxial Layer on Si Substrate using Spontaneously Formed Nano-Size Via-Holes for Vertical AlGaN High Power FET 

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 2016年  査読有り

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction 

JOURNAL OF APPLIED PHYSICS 118(18) 185303 2015年11月  査読有り

Femtosecond upconverted photocurrent spectroscopy of InAs quantum nanostructures 

APPLIED PHYSICS LETTERS 107(1) 2015年7月  

Enhancement of the performance of GaP solar cells by embedded In(N)P quantum dots 

NANO ENERGY 15 782-788 2015年7月  査読有り

Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μ m 

Applied Physics Letters 106(8) 2015年2月  

Formation of conductive spontaneous via holes in AlN buffer layer on n(+)Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor 

AIP ADVANCES 4(12) 2014年12月  

Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism 

APPLIED PHYSICS LETTERS 105(17) 2014年10月  

Temperature and light-intensity dependence of upconverted photocurrent generation in shallow InAs quantum structures 

JAPANESE JOURNAL OF APPLIED PHYSICS 53(5) 2014年5月  

Microscopic photoluminescence and photocurrent imaging spectroscopy of InAs nanostructures: Identification of photocarrier generation sites for intermediate-band solar cells 

PHYSICAL REVIEW B 89(12) 2014年3月  

Erratum: Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy (Journal of Crystal Growth (2011) 323 (13-16)) 

Journal of Crystal Growth 387 124 2014年2月1日  

Control of hot-carrier relaxation for realizing ideal quantum-dot intermediate-band solar cells 

SCIENTIFIC REPORTS 4 2014年2月  

nm-scaled workfunction mapping of the interfaces of silicon heterojunction (SHJ) solar cell using Kelvin probe force microscopy 

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) 3040-3042 2014年  

Identification of trap states for two-step two-photon-absorption processes in InAs quantum structures for intermediate-band solar cells 

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) 3618-3621 2014年