We prepared GB junctions of Ba(Fe0.9Co0.1)(2)As-2 thin films on bicrystalline [001]-tilt SrTiO3 substrates. The junctions show clear Josephson effects. Electrical characterization shows asymmetric I-V characteristics which can be described within the resistively shunted junction (RSJ) model. A large excess current is observed. Their formal ICRN product is 20.2 mu V at 4.2 K, which is decreased to 6.5 mu V when taking I-ex into account. Fabrication methods to increase this value are discussed. Additionally, measurements on GB junctions of BaFe2(As0.66P0.34)(2) thin films on LSAT bicrystalline substrates are shown. Their symmetric RSJ/flux flow-behavior exhibits a formal ICRN product of 45 mu V, whereas the excess corrected value is 11 mu V.