2020年8月17日
In-plane ferroelectricity and enhanced Curie temperature in perovskite BaTiO<inf>3</inf>epitaxial thin films
Applied Physics Letters
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- 巻
- 117
- 号
- 7
- 開始ページ
- 072902
- 終了ページ
- 072902
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/5.0013484
- 出版者・発行元
- {AIP} Publishing
In-plane ferroelectric polarization in BaTiO3 (BTO) epitaxial thin films on MgAl2O4(001) (MAO) is reported. The directional dependence of both in-plane polarization curves and Raman spectroscopy shows that the films have an orthorhombic structure at room temperature, in contrast to the tetragonal structure of the corresponding bulk. The largest in-plane polarization value among BTO-based tensile-strained films is obtained. The temperature dependence of the lattice constants shows that the Curie temperature of the thin films is as high as 220 °C, which is higher than that of the bulk by 100 °C. The significant enhancement of the Curie temperature is attributed to high-quality coherent epitaxial growth due to perfect matching between the lattice parameter of the c-axis of BTO and that of MAO.
- リンク情報
- ID情報
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- DOI : 10.1063/5.0013484
- ISSN : 0003-6951
- ORCIDのPut Code : 79006282
- SCOPUS ID : 85090117591