2017年7月
Molecular beam epitaxy growth of SmFeAs(O,F) films with T-c=55 K using the new fluorine source FeF3
JOURNAL OF APPLIED PHYSICS
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- 巻
- 122
- 号
- 1
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4990986
- 出版者・発行元
- AMER INST PHYSICS
REFeAs(O,F) (RE: rare-earth element) has the highest-T-c (similar to 58 K) among the iron-based superconductors, but a thin-film growth of REFeAs(O,F) is difficult. This is because it is not only a complex compound consisting of five elements but also requires doping of highly reactive fluorine to achieve superconductivity. We have reported in our previous article that fluorine can be supplied to a film by subliming solid-state fluorides such as FeF2 or SmF3. In this article, we report on the growth of SmFeAs(O,F) using FeF3 as an alternative fluorine source. FeF3 is solid at ambient temperatures and decomposes at temperatures as low as 100-200 degrees C, and releases fluorine-containing gas during the thermal decomposition. With this alternative fluorine source, we have grown SmFeAs(O,F) films with T-c as high as 55 K. This achievement demonstrates that FeF3 has potential as a fluorine source that can be employed ubiquitously for a thin-film growth of any fluorine containing compounds. One problem specific to FeF3 is that the compound is highly hydroscopic and contains a substantial amount of water even in its anhydrous form. In this article, we describe how to overcome this specific problem. Published by AIP Publishing.
- リンク情報
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- DOI
- https://doi.org/10.1063/1.4990986
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000405084900029&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85022341759&origin=inward
- ID情報
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- DOI : 10.1063/1.4990986
- ISSN : 0021-8979
- eISSN : 1089-7550
- SCOPUS ID : 85022341759
- Web of Science ID : WOS:000405084900029