2013年11月
Growth of Nanowires by High-Temperature Glancing Angle Deposition
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 52
- 号
- 11
- 開始ページ
- 110116
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/JJAP.52.110116
- 出版者・発行元
- IOP PUBLISHING LTD
We have demonstrated that nanowires of various metals, Ge, and Ga2O3 can be grown by high-temperature glancing angle deposition (HT-GLAD). The nanowires of metals including Al, Cu, Ag, Au, Mn, Fe, Co, Ni, and Zn are self-catalyzed, while the nanowires of other materials such as Ge and Ga2O3 are catalyzed by Au nanoparticles. However, once the nanowires start to grow, the growth modes of the HT-GLAD nanowires are fundamentally the same, i.e., nanowires with uniform diameter grow only when the vapor is incident at a very high glancing angle and reach a length larger than 1-8 mu m even though the number of deposited atoms corresponds to the average thickness of 20-30 nm. This suggests that there is a universal growth mechanism for the nanowires grown by HT-GLAD. (C) 2013 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.7567/JJAP.52.110116
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000328491800017