2022年10月1日
Improvement of contact resistance at carbon electrode/organic semiconductor interfaces through chemical doping
Applied Physics Express
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 15
- 号
- 10
- 開始ページ
- 101005
- 終了ページ
- 101005
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.35848/1882-0786/ac92c0
- 出版者・発行元
- IOP Publishing
Abstract
Organic thin-film transistors (OTFTs) are promising building blocks for low cost, low-environmental load, and lightweight electronic devices. Carbon-based conductors can be potentially used as TFT electrodes. However, a concern is that the carbon electrode is unsuitable for carrier injection into organic semiconductors due to the difficulty in precise work function control. Herein, we have demonstrated that molecular dopants in carbon networks can improve carrier injection with a reasonably low contact resistance of 510 Ω·cm, which constitutes a key step in the realization of noble-metal-free electronic devices.
Organic thin-film transistors (OTFTs) are promising building blocks for low cost, low-environmental load, and lightweight electronic devices. Carbon-based conductors can be potentially used as TFT electrodes. However, a concern is that the carbon electrode is unsuitable for carrier injection into organic semiconductors due to the difficulty in precise work function control. Herein, we have demonstrated that molecular dopants in carbon networks can improve carrier injection with a reasonably low contact resistance of 510 Ω·cm, which constitutes a key step in the realization of noble-metal-free electronic devices.
- リンク情報
- ID情報
-
- DOI : 10.35848/1882-0786/ac92c0
- ISSN : 1882-0778
- eISSN : 1882-0786