2020年3月
Precipitation of multilayer graphene directly on gallium nitride template using Tungsten capping layer
Journal of Crystal Growth
- ,
- ,
- ,
- 巻
- 534
- 号
- 開始ページ
- 125493
- 終了ページ
- 125493
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.jcrysgro.2020.125493
- 出版者・発行元
- Elsevier BV
The direct growth of graphene was investigated with precipitating graphene on a GaN template at various temperatures. In the method, a carbon source and catalyst were firstly deposited, and the sample was annealed to precipitate graphene. Tungsten capping layer was deposited on the surface to suppress the graphene precipitating to the sample surface. Consequently, the graphene was precipitated at the interface between the catalyst and the GaN template. After the removal of the catalyst, the graphene was successfully obtained on the GaN template. The Raman D/G ratio of the graphene decreased with increasing the annealing temperature. At 700 °C, fine graphene was obtained on the GaN template while maintaining the flatness and smoothness of the GaN surface. XRD and XPS measurements were also performed to investigate the precipitation of the graphene in detail.
- リンク情報
- ID情報
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- DOI : 10.1016/j.jcrysgro.2020.125493
- ISSN : 0022-0248
- SCOPUS ID : 85078207137